Abstract:Indium phosphide (InP) quantum dots (QDs) are promising alternatives to cadmium‐based QDs, yet face stability challenges. This study presents a synthetic method for giant InP with morphological ZnSe/ZnSeS/ZnS shell with over 90% photoluminescence quantum yield (PLQY). By addressing lattice mismatch strain, these giant QDs achieve improved stability, advancing future applications in eco‐friendly displays and energy‐efficient lighting. Indium phosphide (InP) quantum dots (QDs) are increasingly considered potent alternatives to traditional cadmium‐based QDs. Notwithstanding, the material stability of InP, especially when juxtaposed with its cadmium‐based counterparts, poses significant challenges in its application. Generally, a thick ZnS shell is applied to InP cores to thwart photo‐oxidation and diminish nonradiative recombination. Yet, the pronounced lattice mismatch between the InP core and the ZnS shell can introduce lattice defects, consequently attenuating the luminescence efficiency. This makes the cultivation of a flawless thick shell a paramount challenge. In the present research, a synthetic methodology is elucidated to fabricate highly efficient InP QDs with dimensions exceeding 20 nm, achieved by alleviating the lattice mismatch strain during the shell growth. By regulating the shell composition and morphology, InP/ZnSe/ZnSeS/ZnS QDs with shield‐like morphology are prepared and demonstrate a photoluminescence quantum yield (PLQY) of ≈90%, exhibiting significantly enhanced photostability and thermal stability. This discovery is expected to greatly advance the preparation of highly efficient InP‐based or other QDs, expanding their potential in various applications such as environmentally friendly displays and energy‐saving lighting.

Growth of InZnP/ZnS Core/shell Quantum Dots with Wide-Range and Refined Tunable Photoluminescence Wavelengths

An Efficient Green-Emitting Quantum Dot with Near-Unity Quantum Yield and Suppressed Auger Recombination for High-Performance Light-Emitting Diodes

Sequential Growth of InP Quantum Dots and Coordination Between Interfacial Heterovalency and Shell Confinement: Implication for Light-Emitting Devices

Color-tunable Optical Properties of Cadmium-Free Transition Metal Ions Doped InP/ZnS Quantum Dots

Highly luminescent InP–In(Zn)P/ZnSe/ZnS core/shell/shell colloidal quantum dots with tunable emissions synthesized based on growth-doping

Stoichiometry-Controlled InP-Based Quantum Dots: Synthesis, Photoluminescence, and Electroluminescence

Dual-Emissive and Color-Tunable Mn-Doped InP/ZnS Quantum Dots Via a Growth-Doping Method.

Iodide capped PbS/CdS core-shell quantum dots for efficient long-wavelength near-infrared light-emitting diodes

White light-emitting quantum dot diodes and tuning of luminescence processes

Green InP/ZnSeS/ZnS Core Multi‐Shelled Quantum Dots Synthesized with Aminophosphine for Effective Display Applications

InP Quantum Dots: Synthesis and Lighting Applications.

Near-Unity Photoluminescence Quantum Yield of Core-Only InP Quantum Dots via a Simple Postsynthetic InF 3 Treatment

Progress on Synthesis of Indium Phosphide Quantum Dots

Bright InP Quantum Dots by Mid-Synthetic Modification with Zinc Halides

InAs/InP/ZnSe Core/shell/shell Quantum Dots As Near-Infrared Emitters: Bright, Narrow-Band, Non-Cadmium Containing, and Biocompatible

Rigid CuInS 2 /ZnS Core/Shell Quantum Dots for High Performance Infrared Light-Emitting Diodes

High‐Performance Giant InP Quantum Dots with Stress‐Released Morphological ZnSe‐ZnSeS‐ZnS Shell

Quasi‐Shell‐Growth Strategy Achieves Stable and Efficient Green InP Quantum Dot Light‐Emitting Diodes

Engineering Core Size of InP Quantum Dot with Incipient ZnS for Blue Emission

Synthesis of Cu-doped InP nanocrystals (d-dots) with ZnSe diffusion barrier as efficient and color-tunable NIR emitters.

Enhanced Tunable Dual Emission of Cu:InP/ZnS Quantum Dots Enabled by Introducing Ag Ions