Near-Unity Photoluminescence Quantum Yield of Core-Only InP Quantum Dots via a Simple Postsynthetic InF 3 Treatment

Maarten Stam,Guilherme Almeida,Reinout F Ubbink,Lara M van der Poll,Yan B Vogel,Hua Chen,Luca Giordano,Pieter Schiettecatte,Zeger Hens,Arjan J Houtepen

DOI: https://doi.org/10.1021/acsnano.4c03290

IF: 17.1

2024-05-22

ACS Nano

Abstract:Indium phosphide (InP) quantum dots (QDs) are considered the most promising alternative for Cd and Pb-based QDs for lighting and display applications. However, while core-only QDs of CdSe and CdTe have been prepared with near-unity photoluminescence quantum yield (PLQY), this is not yet achieved for InP QDs. Treatments with HF have been used to boost the PLQY of InP core-only QDs up to 85%. However, HF etches the QDs, causing loss of material and broadening of the optical features. Here, we...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to increase the photoluminescence quantum yield (PLQY) of the core - only structure of indium phosphide (InP) quantum dots (QDs) to approach or reach a unit value. Specifically, the paper mentions that although cadmium - based and lead - based quantum dots have been able to produce core - only structures with PLQY close to unity, indium phosphide quantum dots have not yet achieved this goal. Although the traditional hydrofluoric acid (HF) treatment can increase the PLQY to 85%, it will lead to material loss and broadening of optical characteristics, which limits its effectiveness in practical applications.

To this end, the researchers have developed a simple post - synthesis HF - free treatment method to passivate the surface of InP quantum dots by using indium fluoride (InF3). This method not only avoids the negative effects brought by HF treatment, but also can increase the PLQY to 93% under optimized conditions and almost achieve single - exponential photoluminescence decay. In addition, this treatment method is applicable to InP quantum dots obtained by different sizes and different synthesis routes, showing broad application potential.

The paper also points out that the high - PLQY core - only InP quantum dots obtained by this treatment method are comparable in optical performance to InP/ZnSe/ZnS core - shell quantum dots, but have a higher absorption coefficient in the blue - light region and may have a faster charge - transfer speed. These advantages are particularly important for the applications of micro - LEDs or photodetectors.