Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride

A. V. Baglov,E. B. Chubenko,A. A. Hnitsko,V. E. Borisenko,A. A. Malashevich,V. V. Uglov
DOI: https://doi.org/10.1134/s1063782620020049
IF: 0.66
2020-01-01
Semiconductors
Abstract:Interrelationship between the structure and optical properties of graphite-like semiconductor carbon nitride produced by the heat treatment of thiocarbamide in an oxygen-containing medium at temperatures in the range from 400°C to 625°C is established. It is found that the maximum of the photoluminescence band shifts from 417 to 494 nm and simultaneously broadens, as the temperature of synthesis is elevated to 625°C. This effect is attributed to doping with oxygen and to the formation of defects as a consequence of decomposition of the already synthesized material with increasing temperature.
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