N-Type Polyaniline Hole-Blocking Layer for High-Efficiency QDSC by One-Pot Electropolymerization and Selective Aprotic Cation ([EMIM]+) Doping

Dongqi Li,Zhaohua Jiang,Zhongping Yao
DOI: https://doi.org/10.1088/1361-6528/ab89d2
IF: 3.5
2020-01-01
Nanotechnology
Abstract:In the field of clean solar-to-current devices, the photoelectron transfer process is essential for photovoltaic conversion in the typical n-i-p solar-cell structure. With regard to the oriented injection and ejection of photoelectrons, the development of hole-blocking layer (HBL) materials with a high electron transfer capability are exceedingly desirable. Profiting from the distortion of the p-π electron cloud attracted by a doped aprotic cation, a modified n-type polyaniline (PANI) as the HBL of a photoanode has been successfully fabricated through a facial one-pot square-wave potentiostatic electropolymerization method. In terms of flat-band potential, charge-carrier concentration and device impedance, the synthesized n-type polyaniline layer doped by aprotic ionic liquid (AIL; [EMIM] [EtSO4]) (AIL-PA layer) for quantum dot solar cells (QDSCs) directly facilitates the high electron carrying capacity as well as the electron transfer driving force. Furthermore, the n-type polyaniline layer doped by AIL ([EMIM] [EtSO4]) (AIL-PA layer) has a widely matching band gap for electron exportation and improved photovoltaic performance of CdSxSe1-x QDSCs: the power conversion efficiency is 10.5% and the J sc is 21.59 mA cm-2 for the device with an AIL-PA HBL. The electron diffusion length L D is 8.07 μm for the photoanode with AIL-PA I and 7.58 μm for the photoanode with AIL-PA II.
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