Polyacrylic Acid-Doped Polyaniline As P-Type Semiconductor In Schottky-Barrier Electronic Device

Show-An Chen,Yih Fang,Hsun-Tsing Lee
DOI: https://doi.org/10.1016/0379-6779(93)90561-A
IF: 4
1993-01-01
Synthetic Metals
Abstract:Large area (about 0.3-1 cm2) Schottky diodes with polyacrylic acid (PAA)-doped polyaniline (PAn) and undoped PAn as p-type semiconductors sandwiched in between aluminum (Al) and indium-tin oxide (ITO) prepared by casting technique exhibit a moderate rectifying behavior and low leakage current. The current rectification ratio of the diode after doping increases by 1-order raising from 30 at +/-1.3 V to 433 at +/-0.8 V; and the passing current density raises from 10(-5) A/cm2 to 10(-2) A/cm2.
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