A 28ghz CMOS Differential Bi-Directional Amplifier for 5G NR

Zheng Li,Jian Pang,Ryo Kubozoe,Xueting Luo,Rui Wu,Yun Wang,Dongwon You,Ashbir Aviat Fadila,Joshua Alvin,Bangan Liu,Zheng Sun,Hongye Huang,Atsushi Shirane,Kenichi Okada
DOI: https://doi.org/10.1109/asp-dac47756.2020.9045187
2020-01-01
Abstract:A 28GHz differential bi-directional amplifier in a standard 65nm CMOS process is presented. This work is realized based on the neutralized bi-directional core together with the fully shared inter-stage matching networks. The core chip area is only 0.11mm2. At 28GHz, a 15.1-dBm saturation output power and a 4.2-dB noise Figure are realized for PA mode and LNA mode, respectively. The DC power consumptions for PA mode and LNA mode are 149mW and 31mW, respectively, under 1-V DC supply.
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