A Compact 39-Ghz 17.2-Dbm Power Amplifier for 5G Communication in 65-Nm CMOS

Yun Wang,Rui Wu,Kenichi Okada
DOI: https://doi.org/10.1109/rfit.2018.8524130
2018-01-01
Abstract:This paper presents design of a 39-GHz power amplifier for fifth-generation (5G) mobile communication in millimeter-wave. The power amplifier consists of two differential capacitive-neutralized common-source stages. Low-loss transformers are employed for matching network in each stage. With 1.1-V supply, the power amplifier achieves a small-signal gain of 17 dB, saturated output power (P SAT ) of 17.2 dBm, and 1-dB compression point (P 1dB ) of 15.5 dBm at 39 GHz. The amplifier has a maximum power-added efficiency (PAE MAX ) of 31.2% and 30.2% at P 1dB . The amplifier has an average output power of 9.0 dBm and 10.0% PAE with -25 dBc EVM. The amplifier has been fabricated in standard 65-nm CMOS and occupies an area of 0.081 mm 2 .
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