Electronic and magnetic properties of rare-earth metals doped ZnO monolayer

TanChanglong,XuDianshuang,ZhangKun,TianXiaohua,CaiWei

IF: 3.791

2016-01-01

Journal of Nanomaterials

Abstract:The structural, electronic, and magnetic properties of rare-earth metals doped ZnO monolayer have been investigated using the first-principles calculations. The induced spin polarization is confirm...

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Electronic and Magnetic Properties of Rare-Earth Metals Doped ZnO Monolayer

Changlong Tan,Dianshuang Xu,Kun Zhang,Xiaohua Tian,Wei Cai

DOI: https://doi.org/10.1155/2015/329570

IF: 3.791

2015-01-01

Journal of Nanomaterials

Abstract:The structural, electronic, and magnetic properties of rare-earth metals doped ZnO monolayer have been investigated using the first-principles calculations. The induced spin polarization is confirmed for Ce, Eu, Gd, and Dy dopings while the induced spin polarization is negligible for Y doping. The localizedfstates of rare-earth atoms respond to the introduction of a magnetic moment. ZnO monolayer undergoes transition from semiconductor to metal in the presence of Y, Ce, Gd, and Dy doping. More interestingly, Eu doped ZnO monolayer exhibits half-metallic behavior. Our result demonstrates that the RE-doping is an efficient route to modify the magnetic and electronic properties in ZnO monolayer.
Electronic Structure and Optical Properties of Rare Earth Element (Y, La) Doped in Zno

Wu Yu-Xi,Hu Zhi-Xiang,Gu Shu-Lin,Qu Li-Cheng,Li Teng,Zhang Hao

DOI: https://doi.org/10.7498/aps.60.017101

IF: 0.906

2011-01-01

Acta Physica Sinica

Abstract:The geometrical structures,band structures,density of states(DOS) and optical properties of undoped and doped rare earth elements(Y, La) in ZnO have been calculated from the first principles of plane wave ultra-soft pseudo-potential method based on density functional theory. After doping,the stability of structures are enhanced and the band gap becomes wider. When doped with Y (La), the Fermi energy of the system goes into the conduction band, the system shows metallicity and transforms into degenerate semiconductor. Furthermore, the change of optical properties after doping have been analyzed.
Tunable magnetism in a nonmetal-substituted ZnO monolayer: A first-principles study

Hongyan Guo,Yu Zhao,Ning Lü,Erjun Kan,Xiaocheng Zeng,Xiaojun Wu,Jinlong Yang

DOI: https://doi.org/10.1021/jp2125069

2012-01-01

Abstract:We have studied structural, electronic, and magnetic properties of the graphene-like ZnO monolayer doped with nonmetal species using the first-principles calculations. Particular attention has been placed on the ZnO monolayer with one or two oxygen atoms per supercell substituted by carbon, boron, or nitrogen atoms. We find that the ZnO monolayer with one oxygen atom per supercell substituted by a carbon or boron atom is ferromagnetic (FM) half metal (HM), while that with a nitrogen atom per supercell is a FM semiconductor. Upon the ZnO monolayer with two oxygen atoms per supercell substituted by carbon or boron, the magnetic properties vary, depending on the distance between two impurities. Two neighboring carbon or boron atoms in the ZnO monolayer form dimer pairs, which convert the ZnO monolayer into an n-type semiconductor with a nonmagnetic (NM) ground state. As the distance between two carbon or boron atoms increases, the doped ZnO monolayer undergoes both NM AFM-FM and semiconductor HM transitions. However, the ZnO monolayer with two N atoms per supercell is a p-type semiconductor with the antiferromagnetic (AFM) ground state, regardless of the distance between N atoms. The negligible energy difference between AFM and FM states of the N-doped ZnO monolayer implies it exhibits paramagnetic behavior at room temperature. Our study demonstrates that nonmetal-doped ZnO monolayers possess tunable magnetic and electronic properties, suitable for applications in electronics and spintronics at nanoscale.
Intrinsic Ferromagnetism in Sm Doped Zno

Yiren Wang,Jingyuan Piao,Yunhao Lu,Sean Li,Jiabao Yi

DOI: https://doi.org/10.1016/j.materresbull.2016.06.039

IF: 5.6

2016-01-01

Materials Research Bulletin

Abstract:Magnetic behaviours of Sm doped ZnO are studied both theoretically and experimentally. The results of first principles calculations indicate that Sm doped ZnO is ferromagnetic and the magnetic moment originates from the 4f electrons of the rare-earth element Sm. The local magnetic moments mediated by carriers in ZnO induce the ferromagnetic ordering. In addition, Sm dopants prefer uniformly distributed in ZnO matrix, suggesting possible intrinsic ferromagnetism. Experimentally, Sm doped ZnO nanoparticles were fabricated using a hydrothermal method. XRD analysis indicates that Sm has been effectively incorporated into ZnO lattice. Room temperature ferromagnetism is observed in the samples. Magnetic measurements also show that 2.5 at% Sm doped ZnO has larger saturation magnetization than 5 at% Sm doped sample. The work has shown that rare earth element doping can lead to intrinsic diluted magnetic semiconductors, which may pave ways for searching high quality diluted magnetic semiconductors using rare earth elements as dopants. (C) 2016 Published by Elsevier Ltd.
Zn vacancy induced ferromagnetism in K doped ZnO

yiren wang,jingyuan piao,guozhong xing,yunhao lu,zhimin ao,nina bao,jun ding,sean li,jiabao yi

DOI: https://doi.org/10.1039/c5tc02936h

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:Using first-principle calculations, we studied the mechanism of the magnetic properties of K doped ZnO. The results show that the magnetic moment originates from the O 2p hole states around Zn vacancies. K substitution in Zn can also induce magnetism, which is due to the formation of the partial Zn vacancy induced by lattice distortion. Ferromagnetic ordering occurs via p-p coupling, which is mediated by the holes that result from K doping. Further investigation indicates that a single Zn vacancy has a high formation energy, whereas the formation energy of a defect complex composed of K interstitial (K-int), K substitutional (K-Zn) and zinc vacancy (V-Zn) is significantly reduced. In addition, K dopants prefer a large separation, which suggests uniform distribution. Experimentally, K doped ZnO nanorods were fabricated using a hydrothermal method and room temperature ferromagnetism was observed. 2 at% K doped ZnO has the largest saturation magnetization, which is consistent with first-principle calculations.
Transition Metal Adsorbed-Doped ZnO Monolayer: 2D Dilute Magnetic Semiconductor, Magnetic Mechanism, and Beyond 2D

Meng Zhang,Xinying Shi,Xiao Wang,Taohai Li,Marko Huttula,Youhua Luo,Wei Cao

DOI: https://doi.org/10.1021/acsomega.7b00093

IF: 4.1

2017-01-01

ACS Omega

Abstract:As an improvement over organic or inorganic layered crystals, the synthetic monolayer ZnO(M) inherits semiconductivity and hostability from its bulk, yet it acts as a promising host for dilute magnetic semiconductors. Here, we report the electronic and magnetic properties of ZnO(M) doped with one 3d transition metal ion and simultaneously adsorbed with another 3d transition metal ion. Two sequences are studied, one where the dopant is fixed to Mn and the adsorbate is varied from Sc to Zn and another where the dopant and adsorbate are reversed. First-principles results show that the stable adsorbed-doped systems possess a lower bandgap energy than that of the host. System magnetic moments can be tuned to |5 - x|μB, where x refers to the magnetic moment of the individual 3d atom. An interplay between superexchange and direct exchange yields a ferromagnetic system dually adsorbed-doped with Mn. In addition to a novel material design route, the magnetic interaction mechanism is found beyond two dimensions, having been identified for its three-dimensional bulk and zero-dimensional cluster counterparts.
First-Principles Study of Magnetic Properties in V-Doped Zno

Qian Wang,Qiang Sun,Puru Jena,Zheng Hu,R. Note,Y. Kawazoe

DOI: https://doi.org/10.1063/1.2768628

IF: 4

2007-01-01

Applied Physics Letters

Abstract:A comprehensive theoretical study of electronic and magnetic properties of V-doped ZnO in bulk as well as (112¯0) thin films has been performed using density functional theory. Vanadium atoms substituted at Zn sites show very little selectivity of site occupancy. More importantly, different geometries with ferromagnetic, ferrimagnetic, and antiferromagnetic configurations are found to be energetically nearly degenerate both in Zn1−xVxO bulk and subsurface layers of the thin film. On the other hand, V atoms couple ferromagnetically when they occupy surface sites of the thin film. The diverse magnetic behaviors in V-doped ZnO account for the many reported conflicting experimental results.
Computational Research of Electronic and Magnetic Properties of Nonmetal Doping of Graphene-Like ZnO Monolayer

Jun-Qing Wen,Jian-Min Zhang,Xu Yang,Hua Wu

DOI: https://doi.org/10.1007/s10948-017-4403-z

2017-01-01

Journal of Superconductivity and Novel Magnetism

Abstract:In this paper, the geometrical, electronic, and magnetic properties of nonmetal (B, C, N, F, Si, P, or S) atom doping of g-ZnO monolayer supercell have been comprehensively calculated using the first-principle method. The structural optimization implies that nonmetal atom doping of g-ZnO monolayer leads to the structural distortion around the doping atoms compared with pure g-ZnO sheet. We find that g-ZnO monolayer with one O atom per supercell substituted by one B or C atom is ferromagnetic half metal, and that substituted by one N, Si, or P atom exhibits a ferromagnetic semiconductor feature, while that substituted by one F or S atom appears to be nonmagnetic semiconductor. The total magnetic moments mainly originates from the spin polarization of the doping atom (B, C, N, Si, and P), and the rest comes from the nearest Zn and O atoms.
Electronic structure and magnetic properties of the N monodoping and (Li, N)-codoped ZnO

Yifei Chen,Qinggong Song,Huiyu Yan,Xiong Yang,Tong Wei

DOI: https://doi.org/10.1016/j.ssc.2011.01.030

IF: 1.934

2011-01-01

Solid State Communications

Abstract:Using first-principles calculations based on density functional theory, we investigated systematically the electronic structures and magnetic properties of N monodoping and (Li, N) codoping in ZnO. The results indicate that monodoping of N in ZnO favors a spin-polarized state with a magnetic moment of 0.95 μB per supercell and the magnetic moment mainly comes from the unpaired 2p electrons of N and O atoms. In addition, it was found that monodoping of N in ZnO is a weak ferromagnet and it is the spin-polarized O atoms that mediate the ferromagnetic exchange interaction between the two N atoms. Interestingly, by Li substitutional doping at the cation site (LiZn), the ferromagnetic stability can be increased significantly and the formation energy can be evidently reduced for the defective system. Therefore, we think that the enhancement of ferromagnetic stability should be attributed to the accessorial holes and the lower formation energy induced by LiZn doping.
DFT study of rare earth (Tm, Yb, Ce) doped ZnO: structural, optoelectronic and electrical properties

M. Khuili,N. Fazouan,H. Abou El Makarim,E. H. Atmani,D. P. Rai,M. Houmad

DOI: https://doi.org/10.48550/arXiv.2004.10728

2020-04-23

Abstract:A comparative study of wurtzite ZnO doped by rare earth elements (Tm, Yb, Ce) have been investigated using density functional theory (DFT) based on the full-potential linearized augmented plane wave orbital (FP-LAPW) method, as implemented in Wien2K code. The structural parameters were calculated by PBEsol functional and in good agreement with the experimental data. The electronic (density of states, band structure) and optical (absorption coefficient, reflectivity, refraction index) properties were determined by TB-mBJ potential. The rare earth element doped ZnO have a significant impact on the optoelectronic properties which are mainly arise due to the presence of 4f electrons. The results of electronic structure shows that the doping of Tm, Yb, Ce on pristine ZnO has increases the band gap and in qualitative agreement with the experimental results. In many cases the Fermi level has been shifted to the conduction band, revealing n-type characters. Electrical conductivity has been calculated using BoltzTrap code based on the semiclassical equation of Boltzmann. It has been observed that the conductivity has a direct relation with the temperature and carriers concentration. Our results provide the basis for future research in Tm, Yb, Ce doped ZnO compounds used as integrated optoelectronic devices and solar cells.

Materials Science
Magnetism from 2p states in K-doped ZnO monolayer: A density functional study

Dang-Qi Fang,Yang Zhang,Shaoru Zhang

DOI: https://doi.org/10.1209/0295-5075/114/47012

2016-01-01

Abstract:Using density-functional-based methods, we have studied 2p-based magnetic moments and magnetic coupling in potassium (K)-doped ZnO monolayer. We find that the substitution of a K atom at a Zn site in a ZnO monolayer induces a magnetic moment of 1.0 mu(B) per cell mainly originating from the O-2p states and has much lower formation energy than a magnetic Zn vacancy. A half-metallic electronic property and long-range ferromagnetic coupling between the magnetic moments are obtained based on the generalized gradient approximation (GGA) calculations, which is explained by a double-exchange-like mechanism. Moreover, with stronger correlation correction on 2p states, the structure of the substitutional K impurity undergoes a Jahn-Teller-like distortion. Incorporating magnetism into a two-dimensional ZnO monolayer will promote its application in nanodevices. Copyright (C) EPLA, 2016
Correlation of Structural and Magnetic Properties of ZnO Films with Different Fe Doping Concentrations

Wang Lei,Xu Wei,Ge Jianquan,Yang Tao

DOI: https://doi.org/10.1117/12.2201154

2015-01-01

Abstract:The microstructure, optical properties, and magnetic properties of Fe-doped ZnO thin films prepared by direct current (DC) magnetron sputtering were studied in detail. The chemical composition were examined by Energy Dispersive x-ray Spectroscopy (EDS) and the charge state of Fe ions in the ZnO:Fe thin films was characterized by X-Ray photoelectronic spectrometry (XPS). X-ray diffraction (XRD) characterization of ZnO:Fe thin films confirmed the exclusive formation of the films with the wurtzite structure. The optical transmittance of the films decreased with the increasing of the iron concentration. Room-temperature magnetic measurements indicated that all the films are not ferromagnetic above 50 K. The effect of Fe doping was discussed and relevant mechanism was proposed by comparing with previous studies in ZnO systems.
Computational Research of Electronic, Optical and Magnetic Properties of Ce and Nd Co-Doped ZnO

Jun-Qing Wen,Yu-Shun Han,Xu Yang,Jian-Min Zhang

DOI: https://doi.org/10.1016/j.jpcs.2018.10.014

IF: 4.383

2018-01-01

Journal of Physics and Chemistry of Solids

Abstract:We have performed a systematical calculations for Ce and Nd co-doped ZnO using the first principles method. The ZnO crystal with two Zn atoms substituted by Ce and Nd atoms is direct band gap, and the Fermi level moves upward into conduction band with the n-type properties. At the same time, the band gaps of Ce and Nd co-doped model are bigger than that of single Ce or Nd doped systems, and there are more electrons near the Fermi level. Ce or Nd doped ZnO is half-metallic and the total magnetic moments mainly come from the contribution of Ce 4f and Nd 4f states. The Ce and Nd co-doped makes the crystal undergo transition from AFM to FM to AFM with the change of Ce-Nd distance. Ce and Nd co-doped ZnO can enhance absorption in the visible range, and all optical coefficients of Ce and Nd co-doped ZnO have obviously red-shift in low energy range.
The Magnetic Phase Transition in Cu-doped ZnO: from Bulk to Nanocluster

Qianjin Wang,Jinbin Wang,Xiangli Zhong,Qiuhong Tan,Yichun Zhou

DOI: https://doi.org/10.1016/j.ssc.2011.10.002

IF: 1.934

2012-01-01

Solid State Communications

Abstract:Using the first-principles calculations based on the density functional theory, we have investigated the magnetic properties of Cu-doped ZnO both in bulk and nanocluster. The calculated results show that the substitutional Cu ions are spin polarized and have a tendency to assemble. It is found that the ground state has shown a change from ferromagnetic phase to antiferromagnetic phase as the size for the doping system decreases from bulk to nanocluster. In bulk ZnO, the ferromagnetism is attributed to the strong hybridization between Cu 3d and O 2p states. In ZnO nanocluster, however, the antiferromagnetic exchange interaction is dominant because of the very close Cu–Cu distance.
Tailoring the physicochemical and electrical properties of ZnO thin films by doping with light and heavy rare-earth element via wet chemical approach

Altamash Shabbir,Zain Hussain,Danish Ali Khan,Zuhair S. Khan

DOI: https://doi.org/10.1007/s10854-024-13401-x

2024-08-26

Journal of Materials Science Materials in Electronics

Abstract:Enhancing the electrical properties of semiconductor materials, particularly their insulation and conductivity, is crucial for applications in sensors and optoelectronic devices. This study investigates the effects of doping in Zinc Oxide-based semiconductor thin films with light (Lanthanum) and heavy (Holmium) rare-earth elements at identical concentrations (wt.%). The films were synthesized via a wet chemical process with stabilized sol–gel solution, aged for 24 h, and annealed in oxygen at 450 °C with a ramp rate of 5 °C/min. The physicochemical and electrical properties of the films were analyzed. X-ray Diffraction confirmed that the hexagonal wurtzite crystal structure of the ZnO films remained intact after doping, with crystallite sizes decreasing from 37 to 25 nm. Scanning Electron Microscopy revealed a reduction in particle size from 47 to 34 nm, with significant agglomeration in Holmium-doped samples. Energy-dispersive X-ray spectra with mapping verified the successful incorporation of rare-earth elements into the ZnO lattice structure. Fourier Transform Infrared Spectroscopy analysis identified peaks related to carboxyl and functional groups, and peaks at 687–756 cm −1 associated with dopant-induced zinc-oxygen bond vibrations. Lanthanum doping significantly enhanced conductivity, increasing it from 0.38 × 10 1 to 3.67 × 10 1 (Ω.cm) −1 , while resistivity decreased from 40.2 × 10 −1 to 3.54 × 10 −1 Ω.cm. Conversely, Holmium doping reduced conductivity from 0.38 × 10 1 to 0.16 × 10 1 (Ω.cm) −1 and increased resistivity from 40.2 × 10 −1 to 72.5 × 10 −1 Ω.cm due to formation of localized energy levels that trap charge carriers. These findings underscore the significant impact of light and heavy rare-earth doping on the electrical properties of ZnO thin films, offering key insights for optimizing semiconductor materials for specific technological applications.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Effect Of Different Doping Ratios Of Mo Doping And Zn Vacancy On Magneto-Optical Properties Of Zno

Shulin Sha,Qingyu Hou,Yajing Liu,Zhenchao Xu

DOI: https://doi.org/10.1016/j.ssc.2021.114267

IF: 1.934

2021-01-01

Solid State Communications

Abstract:The source of ZnO magnetism in Mo doping and Zn vacancy is not fully understood. Generalized gradient approximate plane wave ultrasoft pseudopotential method was adopted based on the spin density functional theory to solve this problem. The structural stability and magneto-optical properties of Mo doping and Zn vacancy in co-existing ZnO were calculated using the first principle. The band gap of the doping system is narrower than that of the pure ZnO, and the absorption spectrum showed a red shift in the visible light range of 380-600 nm. The Zn34MoO36 had the strongest absorption spectrum intensity, the most significant red shift phenomenon, the easiest electron and hole separation, and the strongest photocatalytic activity. These features are beneficial to the design and preparation of new photocatalysts. When Mo to Zn vacancy ratio of 2:2, the Zn32Mo2O36 has the strongest magnetic properties, and the electron spin polarization was 100%, which is advantageous for designing and preparing the dilute magnetic semiconductors. The Zn32Mo2O36 has shown room temperature ferromagnetism, and the magnetism of the Zn32Mo2O36 came from the hole produced by Zn vacancy. Double exchange interaction occurred between non-pairing itinerant electron in the O-2P orbit near the Zn vacancy and the spin polarization of electrons in Mo-4d orbitals with the hole as a medium. This is consistent with the mean field approximation and the double exchange mechanism theory.
Magnetic Properties of Transition-Metal-dopedzn1−xtxo(t=

Qian Wang,Qiang Sun,P. Jena,Yoshiyuki Kawazoe

DOI: https://doi.org/10.1103/physrevb.79.115407

IF: 3.7

2009-01-01

Physical Review B

Abstract:Theoretical calculations based on density-functional theory and generalized gradient approximation have been carried out in studying the electronic structure and magnetic properties of transition-metal-doped ${\text{Zn}}_{1\ensuremath{-}x}{T}_{x}\text{O}$ ($T=\text{Cr}$, Mn, Fe, Co, and Ni) $(11\overline{2}0)$ thin films systematically with and without intrinsic point defects (e.g., vacancies and interstitials), and as function of concentration and distribution of dopants and vacancies. Using large supercells and geometry optimization without symmetry constraint, we are able to determine the sites that metal atoms prefer to occupy, their tendency to cluster, the preferred magnetic coupling between magnetic moments at transition-metal sites, and the effect of intrinsic point defects on the nature of their coupling. Except for Mn atom, which distributes uniformly in ZnO thin films in dilute condition, transition-metal atoms occupying Zn sites prefer to reside on the surface and couple antiferromagnetically. The presence of native point defects has a large effect on the ground-state magnetic structure. In particular, $p$-type defects such as Zn vacancies play a crucial role in tuning and stabilizing ferromagnetism in ${\text{Zn}}_{1\ensuremath{-}x}{T}_{x}\text{O}$ thin films ($T=\text{Cr}$, Mn, Fe, and Ni), while $n$-type defects such as O vacancies or Zn interstitials greatly enhance the ferromagnetic coupling in ${\text{Zn}}_{1\ensuremath{-}x}{\text{Co}}_{x}\text{O}$ thin films. The present study provides a clear insight into the numerous conflicting experimental results on the magnetic properties of $T$-doped ZnO systems.
Structural, optical and magnetic behavior of (Pr, Fe) co-doped ZnO based dilute magnetic semiconducting nanocrystals

Fazal Kabir,Adil Murtaza,Azhar Saeed,Awais Ghani,Anwar Ali,Saleh Khan,Kaili Li,Qizhong Zhao,Kang Kang Yao,Yin Zhang,Sen Yang

DOI: https://doi.org/10.1016/j.ceramint.2022.03.096

IF: 5.532

2022-03-01

Ceramics International

Abstract:The development of ZnO-based dilute magnetic semiconductor nanostructures co-doped with rare-earth and transition metals has attracted substantial attention for spintronics application. In this work, Pr (1%) and Fe (1%, 3%, and 5%) co-doped ZnO nanoparticles (NPs) were synthesized via co-precipitation method, and their structural, morphological, optical, photoluminescence, and magnetic properties were investigated. The single-phase wurtzite hexagonal crystal structure of all samples was detected via X-ray diffraction. Morphological analysis revealed spherical shape of the NPs with an average size in 20–50 nm range. The ultraviolet (UV)–visible measurements showed a redshift in the UV band and a slight change in the bandgap of the co-doped NPs. Fourier transform infrared analysis proved the existence of different functional groups in all synthesized NPs. X-ray photoelectron spectroscopy confirmed that Pr and Fe ions incorporated in the host ZnO lattice exhibit Pr3+ and Fe3+ oxidation states, respectively. Photoluminescence analysis showed that incorporated ions induce characteristic emission bands and structural defects in the synthesized NPs. Magnetic characterization indicated that the ZnO NPs exhibit a diamagnetic nature. However, the (Pr, Fe) co-doped NPs exhibit ferromagnetism at room temperature because of the interactions between Pr3+ and Fe3+ ions and trapped electrons mediated by bound magnetic polarons. Excellent optical and magnetic properties of synthesized samples may render them promising candidates for spintronics applications.

materials science, ceramics
Intrinsic Magnetic Properties of ZnO Nanoislands: Insight from First-Principles Study

Yang Zhang,Zhi-Feng Wu,Peng-Fei Gao,Er-Hu Zhang,Sheng-Li Zhang

DOI: https://doi.org/10.1016/j.physleta.2016.02.007

IF: 2.707

2016-01-01

Physics Letters A

Abstract:First-principles calculations have been employed to investigate magnetic and electronic properties of monolayer and multi-layer ZnO nanoislands which are hexagonal BN (h-BN) prototype structures with zigzag edges and a triangular form. Two types of the zigzag edges, that is, O-terminated and Zn-terminated ones are considered. It has been found that monolayer ZnO nanoislands with the O-terminated edges exhibit magnetic properties, regardless of the nanoislands size. However, the nanoislands with Zn-terminated edges are semiconductors, and the magnetic properties are observed just for some specific sizes. Charge transfer according to Bader charge analysis is introduced to elucidate the magnetic properties of the monolayer ZnO nanoislands. Besides, multi-layer ZnO nanoislands exhibit magnetic features when their layers are odd, while those of even layers are nonmagnetic.
Electronic and Magnetic Properties of Ni-Doped Zinc-Blende ZnO: A First-Principles Study

Suqin Xue,Fuchun Zhang,Shuili Zhang,Xiaoyang Wang,Tingting Shao

DOI: https://doi.org/10.3390/nano8050281

2018-04-26

Abstract:The electronic structure, band structure, density of state, and magnetic properties of Ni-doped zinc-blende (ZB) ZnO are studied by using the first-principles method based on the spin-polarized density-functional theory. The calculated results show that Ni atoms can induce a stable ferromagnetic (FM) ground state in Ni-doped ZB ZnO. The magnetic moments mainly originate from the unpaired Ni 3d orbitals, and the O 2p orbitals contribute a little to the magnetic moments. The magnetic moment of a supercell including a single Ni atom is 0.79 μB. The electronic structure shows that Ni-doped ZB ZnO is a half-metallic FM material. The strong spin-orbit coupling appears near the Fermi level and shows obvious asymmetry for spin-up and spin-down density of state, which indicates a significant hybrid effects from the Ni 3d and O 2p states. However, the coupling of the anti-ferromagnetic (AFM) state show metallic characteristic, the spin-up and spin-down energy levels pass through the Fermi surface. The magnetic moment of a single Ni atom is 0.74 μB. Moreover, the results show that the Ni 3d and O 2p states have a strong p-d hybridization effect near the Fermi level and obtain a high stability. The above theoretical results demonstrate that Ni-doped zinc blende ZnO can be considered as a potential half-metal FM material and dilute magnetic semiconductors.

Electronic and magnetic properties of rare-earth metals doped ZnO monolayer

Electronic and Magnetic Properties of Rare-Earth Metals Doped ZnO Monolayer

Electronic Structure and Optical Properties of Rare Earth Element (Y, La) Doped in Zno

Tunable magnetism in a nonmetal-substituted ZnO monolayer: A first-principles study

Intrinsic Ferromagnetism in Sm Doped Zno

Zn vacancy induced ferromagnetism in K doped ZnO

Transition Metal Adsorbed-Doped ZnO Monolayer: 2D Dilute Magnetic Semiconductor, Magnetic Mechanism, and Beyond 2D

First-Principles Study of Magnetic Properties in V-Doped Zno

Computational Research of Electronic and Magnetic Properties of Nonmetal Doping of Graphene-Like ZnO Monolayer

Electronic structure and magnetic properties of the N monodoping and (Li, N)-codoped ZnO

DFT study of rare earth (Tm, Yb, Ce) doped ZnO: structural, optoelectronic and electrical properties

Magnetism from 2p states in K-doped ZnO monolayer: A density functional study

Correlation of Structural and Magnetic Properties of ZnO Films with Different Fe Doping Concentrations

Computational Research of Electronic, Optical and Magnetic Properties of Ce and Nd Co-Doped ZnO

The Magnetic Phase Transition in Cu-doped ZnO: from Bulk to Nanocluster

Tailoring the physicochemical and electrical properties of ZnO thin films by doping with light and heavy rare-earth element via wet chemical approach

Effect Of Different Doping Ratios Of Mo Doping And Zn Vacancy On Magneto-Optical Properties Of Zno

Magnetic Properties of Transition-Metal-dopedzn1−xtxo(t=

Structural, optical and magnetic behavior of (Pr, Fe) co-doped ZnO based dilute magnetic semiconducting nanocrystals

Intrinsic Magnetic Properties of ZnO Nanoislands: Insight from First-Principles Study

Electronic and Magnetic Properties of Ni-Doped Zinc-Blende ZnO: A First-Principles Study