Abstract:Enhancing the electrical properties of semiconductor materials, particularly their insulation and conductivity, is crucial for applications in sensors and optoelectronic devices. This study investigates the effects of doping in Zinc Oxide-based semiconductor thin films with light (Lanthanum) and heavy (Holmium) rare-earth elements at identical concentrations (wt.%). The films were synthesized via a wet chemical process with stabilized sol–gel solution, aged for 24 h, and annealed in oxygen at 450 °C with a ramp rate of 5 °C/min. The physicochemical and electrical properties of the films were analyzed. X-ray Diffraction confirmed that the hexagonal wurtzite crystal structure of the ZnO films remained intact after doping, with crystallite sizes decreasing from 37 to 25 nm. Scanning Electron Microscopy revealed a reduction in particle size from 47 to 34 nm, with significant agglomeration in Holmium-doped samples. Energy-dispersive X-ray spectra with mapping verified the successful incorporation of rare-earth elements into the ZnO lattice structure. Fourier Transform Infrared Spectroscopy analysis identified peaks related to carboxyl and functional groups, and peaks at 687–756 cm −1 associated with dopant-induced zinc-oxygen bond vibrations. Lanthanum doping significantly enhanced conductivity, increasing it from 0.38 × 10 1 to 3.67 × 10 1 (Ω.cm) −1 , while resistivity decreased from 40.2 × 10 −1 to 3.54 × 10 −1 Ω.cm. Conversely, Holmium doping reduced conductivity from 0.38 × 10 1 to 0.16 × 10 1 (Ω.cm) −1 and increased resistivity from 40.2 × 10 −1 to 72.5 × 10 −1 Ω.cm due to formation of localized energy levels that trap charge carriers. These findings underscore the significant impact of light and heavy rare-earth doping on the electrical properties of ZnO thin films, offering key insights for optimizing semiconductor materials for specific technological applications.

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