A 54-67-ghz Low-Power Highly-Integrated Transceiver in 65-Nm CMOS for FMCW Radar Applications
Qizhou Yang,Shengjie Wang,Jiangbo Chen,Quanyong Li,Wenyan Zhao,Jingwen Xu,Jiabing Liu,Nayu Li,Chunyi Song,Zhiwei Xu
DOI: https://doi.org/10.1109/iws61525.2024.10713708
2024-01-01
Abstract:This paper presents a 54-67 GHz highly-integrated transceiver fabricated in 65-nm CMOS for frequency-modulated continuous-wave (FMCW) radar applications. It consists of a frequency synthesizer, a transmit (Tx) channel, and three receive (Rx) channels. The proposed current-sharing low-noise amplifier (LNA) and injection-locking-based frequency multiplier (FM) facilitate low-power operation. Besides, a class-B-biased mixer is proposed to enhance conversion gain and linearity with low power consumption. The chip achieves a peak Tx output power of 13.1 dBm, a Rx conversion gain (CG) of 25-74 dB, a minimum Rx noise figure (NF) of 8.4 dB at 5 MHz IF frequency across 54-67 GHz. The measured phase noise (PN) is -95.5 dBc/Hz at 1-MHz offset at 60 GHz. The entire chip occupies 2.8 × 4.78 mm 2 area and consumes 385 mW.