An Ultra Low-Power Dual-Band IR-UWB Transmitter in 130-nm CMOS

Okan Zafer Batur,E. Akdağ,H. K. Akkurt,A. Öncü,M. Koca,G. Dündar,E. Akdag,A. Oncu,G. Dundar
DOI: https://doi.org/10.1109/tcsii.2012.2218474
2012-11-01
Abstract:In this brief, a 0–960-MHz/3.1–5-GHz dual-band ultra low-power impulse-radio ultrawideband transmitter is presented. the pulse transmitter integrated circuit is fabricated using a 130-nm CMOS process with the core die area of 0.1 $\hbox{mm}^{2}$. At 1-MHz pulse repetition frequency, the power consumption values are measured in the lower and the upper bands as 5.6 and 31 $\mu\hbox{W}$, respectively. the lower and the upper band “off-time” power consumptions of the transmitter are 0.36 and 1.7 $\mu\hbox{W}$, respectively. the dc-to-radio-frequency conversion efficiencies are 11.1% in the lower band and 4.8% in the upper band.
What problem does this paper attempt to address?