Nanoscale control of domain arrangements in Pb(Zr0.3,Ti0.7)O3 ferroelectric films

ShenZhen-Kui,LuQian,ChenZhi-Hui,JiangAn-Quan,QiuZhi-Jun,QuXin-Ping,ChenYi-Fang,LiuRan

IF: 2.3

2011-01-01

Microelectronic Engineering

Abstract:Arrays of ferroelectric PZT nanostructures with lateral size down to 500nm were fabricated using nanoembossing technique. The static distribution of domain configurations was investigated by Piezor...

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Nanoscale control of domain arrangements in Pb(Zr0.3,Ti0.7)O3 ferroelectric films

Zhen-Kui Shen,Qian Lu,Zhi-Hui Chen,An-Quan Jiang,Zhi-Jun Qiu,Xin-Ping Qu,Yi-Fang Chen,Ran Liu

DOI: https://doi.org/10.1016/j.mee.2010.12.101

IF: 2.3

2011-01-01

Microelectronic Engineering

Abstract:Arrays of ferroelectric PZT nanostructures with lateral size down to 500nm were fabricated using nanoembossing technique. The static distribution of domain configurations was investigated by Piezoresponse Force Microscopy (PFM). The observed presence of patterned domains following the patterned morphology suggests that nanoembossing could be used as a potential method for nanoscale control of domain arrangements in ferroelectrics nanostructures.
Nanoembossing and piezoelectricity of ferroelectric Pb(Zr 0.3,Ti0.7)O3 nanowire arrays

Zhihui Chen

DOI: https://doi.org/10.1016/j.apsusc.2011.04.063

IF: 6.7

2011-01-01

Applied Surface Science

Abstract:Arrays of ferroelectric PZT nanowires with lateral size down to 200 nm were fabricated by nanoembossing technology. Structural characterization of the embossed PZT film was studied by Raman spectroscopy. Multidomain configurations of a single nanowire have been explored by vertical mode piezoresponse force microscopy (VPFM). The local electric polarization of the individual ferroelectric nanowire has also been investigated. Excellent ferroelectric and piezoelectric characteristics observed in the embossed PZT nanowires suggest nanoembossing technique proposed in this work is promising to become a useful method for ferroelectric nanowires fabrication. © 2011 Elsevier B.V. All rights reserved.
Ferroelectricity In Pb(Zr0.5ti0.5)O-3 Thin Films: Critical Thickness And 180 Degrees Stripe Domains

Zhongqing Wu,Ningdong Huang,Zhirong Liu,Jian Wu,Wenhui Duan,Bing-Lin Gu,Xiao-Wen Zhang

DOI: https://doi.org/10.1103/PhysRevB.70.104108

IF: 3.7

2004-01-01

Physical Review B

Abstract:The ferroelectric properties of disorder Pb(Zr0.5Ti0.5)O-3 thin films are investigated with Monte Carlo simulations on the basis of a first-principles-derived Hamiltonian. It is found that there exists a critical thickness of about three unit cells (similar to12 Angstrom) below which the ferroelectricity disappears under the condition that the in-plane polarizations are suppressed by sufficient clamping effect. Above the critical thickness, periodic 180degrees stripe domains with out-of-plane polarizations are formed in the systems in order to minimize the energy of the depolarizing field. The stripe period increases with increasing film thickness. The microscopic mechanism responsible for these phenomena is discussed.
Influence of Nano-Embossing on Properties of Pb(Zr-0.3,Ti-0.7)O-3 Ferroelectric Thin Film

Zhenkui Shen,Zhihui Chen,Jiangrong Fang,Bingrui Lu,Zhijun Qiu,Anquan Jiang,Yifang Chen,Xinping Qu,Ran Liu

DOI: https://doi.org/10.1109/inec.2010.5425090

2010-01-01

Abstract:In this work, we apply nano-embossing technology to fabricate Pb(Zr-0.3,Ti-0.7)O-3 (PZT) ferroelectric thin film nanostructures and investigate the influence of the patterning process on the material and ferroelectric properties by using SEM. XRD and Precision Ferroelectric Tester. Embossing process has been optimized for embossing depth and pattern profile. It was found that embossing will result in (100) preferred orientation of the PZT thin film. The electrical characteristics of patterned and unpatterned PZT films have been also studied for comparison.
Fabrication of Nanostructured PZT Ferroelectric Thin Films and Their Characterization

ZHU Xin-hua,SONG Ye,HANG Qi-ming,ZHU Jian-min,ZHOU Shun-hua,LIU Zhi-guo

2010-01-01

Journal of Functional Biomaterials

Abstract:By using sol-gel spin coating method nanostructured Pb(Zr0.53Ti0.47)O3(PZT) ferroelectric thin films were fabricated on the Si substrates coated by nanoporous alumina membranes with average pore sizes of 20-100nm,in which metal(Au or Pt)nanowires were embedded as a part of the bottom electrode.The dielectric,ferroelectric properties and microstructure of the nanostructured PZT thin films were characterized.The dielectric measurements demonstrated that the dielectric constant of the PZT nanofilms with a thickness of 25nm decreased quickly from 860 to 100 as increasing the frequency below 104 Hz,and then remained almost constant of 100 as further increasing the frequency up to 106 Hz.Such a fast decrease of the dielectric constant in the low frequency region was resulted from the dielectric relaxation of space charges accumulated at the interfaces between the nanofilm and the(bottom and top)metal electrodes.The dielectric loss peak observed near 4000Hz was contributed from the resonant absorption effect of the space charges.The polarization-electric field hystere-sis loops of the nanostructured PZT films with a thickness 100nm showed that the remanent polarization of the PZT nanofilm was 50μC/cm2 and coercive field of 500kV/cm.Cross-sectional TEM images showed that the nanostructured PZT films contacted directly with the bottom electrode(metal nanowires),and the interface between them exhibited some degree of waviness.It was found that some Au nanowires became into branches at their ends after post-annealing the PZT nanofilms,whereas such a phenomenon was effectively prohibited by using Pt nanowires.A selection of proper post-annealing temperature was the critical processing parameter for fabricating nanostructured PZT ferroelectric thin films as making a trade-off between the ordered metal nanowires within the nanoporous alumina membranes and the crystallinity of ferroelectric nanofilms.
Characterizations Of Nanoembossed Pb(Zr-0.3, Ti-0.7)O-3 Ferroelectric Films

Zhenkui Shen,Zhihui Chen,Qian Lu,Anquan Jiang,Zhijun Qiu,Xinping Qu,Yifang Chen,Ran Liu

DOI: https://doi.org/10.1116/1.3497018

2010-01-01

Abstract:Ferroelectric thin films may find potential applications in a broad range of ferroelectronic devices such as mass-storage memories. In this article, arrays of Pb (Zr-0.3, Ti-0.7)O-3 (PZT) ferroelectric cells with minimum lateral size down to 500 nm were fabricated by nanoembossing technique. Structural characterizations of embossed PZT film were carried out by Raman spectroscopy and x-ray diffraction. Ferroelectronic properties of embossed PZT film were investigated by using piezoresponse force microscopy and Radiant Technologies precision material analyzer. Excellent ferroelectric and piezoelectric characteristics observed in the embossed PZT films suggest that the nanoembossing process proposed in this article is promising to become a new manufacturing approach for high density PZT based memory devices at significantly lower cost than the existing technique. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3497018]
Ferroelectric Nanostructures Fabricated by Dip-Coating Process and Microstructural Characterization by Scanning Transmission Electron Microscopy

朱信华,朱健民,周舜华,刘治国

DOI: https://doi.org/10.3969/j.issn.1000-6281.2008.04.007

2008-01-01

Abstract:In this work we report on lead zirconate titanate (PZT) ferroelectric nanestructures fabricated by dip-coating process on silicon substrates covered by nano-porous alumina membranes with pore sizes of 20 nm-100 nm served as templates. Microstructures of the PZT ferroelectric nanostructures were examined by scanning transmission electron microscopy (STEM) with both planar and cross-sectional samples. Cross-sectional TEM images, in conjunction with energy dispersive X-ray elemental analyses revealed the presence of isolated ferroelectric nanastructures imposed by the membrane interiors. Lateral dimensions of the PZT nanostructures can be controlled by the nano-pore sizes of the used alumina membranes. The nano-pores of the alumina membranes were fully penetrated by PZT solution via dip-coating technique, and their interiors were conformally coated by the PZT material with a coating thickness of 4nm-15nm. That was confirmed by the observed lines with dark TEM contrast within the nano-pores. PZT material exists in the manner of continuous medium and/or discrete grains in the channels of nano-pores. Planar STEM images demonstrated that the PZT nanostructures had an oval shape morphology, which was caused by either a local deformation of the nano-pores or shrinkage of PZT solution during the post-annealing process. The ordered FZT nanestructures with a conformal coating thickness of 4 nm-15nm fabricated on Si substrates by dip-coating process, have promising applications in the future, non-volatile ferroelectric random access memories with 3-dimensional structures.
Unusual Vortex Structure in Ultrathin Pb(Zr0.5ti0.5)O-3 Films

Zhongqing Wu,Ningdong Huang,Zhirong Liu,Jian Wu,Wenhui Duan,Bing-Lin Gu

DOI: https://doi.org/10.1063/1.2404534

IF: 2.877

2007-01-01

Journal of Applied Physics

Abstract:Using a first-principles-based approach, we determine the ferroelectric pattern in PbZr0.5Ti0.5O3 ultrathin film. It is found that vortex stripes are formed in the system. The relation between the vortex stripes and the 180° domains is discussed. When a local external field is exerted, the vortex stripe transforms into the vortex loop structure, which leads to the formation of a smaller domain with the polarization antiparallel to the field in the center of the field region. This may provide a convenient way to manipulate nanodomains in thin films.
Patterning of large area nanoscale domains in as-grown epitaxial ferroelectric PbTiO3 films

Luyong Zhang,Guo Tian,Wenda Yang,Dongfeng Zheng,Chuanjie Lin,Jianbiao Xian,Yihang Guo,Xingchen Zhang,Xiuqin Qiu,Lanping Zhang,Zhen Fan,Deyang Chen,Zhipeng Hou,Minghui Qin,Jun-Ming Liu,Xingsen Gao

DOI: https://doi.org/10.1016/j.jmat.2022.08.011

IF: 8.589

2023-01-01

Journal of Materiomics

Abstract:Effective tuning of nanoscale domain structures provides fundamental basis for controlling and engineering of various functionalities in ferroelectric materials. In this work, we demonstrate the precise patterning of nanoscopic domain structures in as-grown epitaxial PbTiO3 (PTO) films by merely introducing an ultrathin pre-patterned doping layer (e.g., Fe-doped PTO). The doping layer can effectively reverse the interfacial built-in bias, consequent to a reversed initial polarization reorientation in the as-grown film, which makes it possible to transfer the nano-patterns in the doping layer into the domain structure of ferroelectric films. For instance, we have successfully fabricated large area ordered array of nanoscale cylindrical domains (downward polarization) embedded in the matrix domain with opposite polarization (upward polarization) in PTO film. These nanoscale cylinder domains also allow deterministic and reversible erasure and creation induced by biased tip scanning. The results provide an effective pathway for on-demand patterning of large area nanoscale domains in the as-grown films, which may find applications in a wide range of nanoelectronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied
Nano-embossing Technology on Ferroelectric Thin Film Pb(Zr0.3,Ti0.7)O3 for Multi-Bit Storage Application.

Zhenkui Shen,Zhihui Chen,Qian Lu,Zhijun Qiu,Anquan Jiang,Xinping Qu,Yifang Chen,Ran Liu

DOI: https://doi.org/10.1186/1556-276x-6-474

2011-01-01

Abstract:In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.
Controllable Microstructures and Multiferroic Properties of Pb(Zr0.53Ti0.47)O3–CoFe2O4 Composite Films

Lu-Yi Ding,Fei-Xiang Wu,Yan-Bin Chen,Zheng-Bin Gu,Shan-Tao Zhang

DOI: https://doi.org/10.1016/j.apsusc.2010.11.031

IF: 6.7

2011-01-01

Applied Surface Science

Abstract:1–3 and 2–2 types Pb(Zr0.53Ti0.47)O3–CoFe2O4 (PZT–CFO) composite films with controllable microstructures, consisted by CFO nanopillar embedded in PZT matrix and PZT–CFO gratings respectively, have been fabricated on Pt/Ti/SiO2/Si substrates by combining lithography technology and pulsed laser deposition. X-ray diffraction confirms that the films are well crystallized under optimized postannealing conditions. Scanning electron microscope reveals that the periodic microstructures can be well controlled. Especially, intrinsic room temperature ferroelectric and ferrimagnetic behaviors are observed simultaneously. The structure–properties relationship is discussed. Our results may provide an alternative method to design and prepare multiferroic composite films with controllable microstructures.
Nanoscale Domain Control in Multiferroic Bifeo3 Thin Films

Ying-Hao Chu,Qian Zhan,Lane W. Martin,Maria P. Cruz,Pei-Ling Yang,Gary W. Pabst,Florin Zavaliche,Seung-Yeul Yang,Jing-Xian Zhang,Long-Qing Chen,Darrell G. Schlom,I. -Nan Lin,Tai-Bor Wu,Ramamoorthy Ramesh

DOI: https://doi.org/10.1002/adma.200601098

IF: 29.4

2006-01-01

Advanced Materials

Abstract:A 1D periodic structure of ferroelectric domains in epitaxial BiFeO3 films is created. By careful control of the growth mechanism for the SrRuO3 bottom electrode, its in-plane lattice parameters are confined by the underlying DYSCo3 (110)(O) single-crystal substrate, enabling the formation of an expitaxial film of (110)(O) SrRuO3 with a single structural domain (see figure).
Self-Organized Ferroelastic Superdomains with Enhanced Piezoresponse in (101)-Oriented Pb(Zr 0.2 ,Ti 0.8 )O 3 Thin Films

Yu-Chen Liu,Meng-Xun Xie,Yu-Huai Li,Sheng-Zhu Ho,Chin-Han Huang,Min-Yuan Huang,Chun-Wei Huang,Yi Chou,Chih-Yen Chen,Yi-Chia Chou,Yi-Chun Chen,Heng-Jui Liu,Jan-Chi Yang

DOI: https://doi.org/10.1021/acsaelm.1c00528

IF: 4.494

2021-08-03

ACS Applied Electronic Materials

Abstract:Thin film engineering, utilizing proper control of crystalline orientation, strain, thickness, and defect density in thin films, has offered tremendous degrees of freedom for researchers to modify the physical properties, phase stability, and domain architectures in a wide spectrum of functional materials. This work unveils a naturally formed superdomain architecture arising from the low-orientation-symmetry-induced energetically degenerate state in a (101)-oriented tetragonal Pb(Zr,Ti)O3 epitaxial film. Different from conventional (101)-oriented/(110)-oriented domains found in (101)-oriented tetragonal Pb(Zr,Ti)O3 epitaxial heterostructures, these superdomains are composed of (101)-oriented domains with an alternative arrangement of opposite out-of-plane polarizations. Additionally, the conjunction between these superdomains has been found as another variant of the 90° domain wall that can exist in the low-symmetric preferred crystallographic orientation. The superdomains simultaneously exhibit an atypical piezoresponse hysteresis loop with additional metastable states, corresponding to the multistate ferroelastic domain switching process. This work gives distinct insight into the correlation between the domain pattern, lattice symmetry, and polarity switching, offering an effective way for exploring and engineering ultrafine domain features in tetragonal ferroelectrics.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.1c00528.AFM images of PZT films with different thicknesses and time-dependent PFM images for the stability test of domain structures (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,engineering, electrical & electronic
Nanopore-induced Dielectric and Piezoelectric Enhancement in PbTiO3 Nanowires

Meng-Jun Zhou,Tiannan Yang,Jian-Jun Wang,Zhaohui Ren,Long-Qing Chen,Ce-Wen Nan

DOI: https://doi.org/10.1016/j.actamat.2020.01.023

IF: 9.4

2020-01-01

Acta Materialia

Abstract:Porous tetragonal PbTiO3 nanowires, synthesized through an intermediate pre-perovskite structure, exhibit distinct behaviors from those of the corresponding bulk PbTiO3. Here we investigate the role of nanopores in the ferroelectric, dielectric, and piezoelectric properties of ferroelectric PbTiO3 nanowires employing phase-field simulations. It is found that the presence of pores gives rise to large enhancements in both dielectric constant and piezoelectric coefficient by ~50% and 30%, respectively, compared with those of the bulk PbTiO3. It is shown that the smaller the pore size is, the higher the dielectric and piezoelectric responses of the nanowire are. A charge compensation mechanism is proposed to explain the experimentally measured change of oxygen ions concentration at the pore surfaces. The findings provide in-depth insights into modulation of material properties through nanopores.
Nanoscale Bubble Domains and Topological Transitions in Ultrathin Ferroelectric Films

Qi Zhang,Lin Xie,Guangqing Liu,Sergei Prokhorenko,Yousra Nahas,Xiaoqing Pan,Laurent Bellaiche,Alexei Gruverman,Nagarajan Valanoor

DOI: https://doi.org/10.1002/adma.201702375

IF: 29.4

2017-10-24

Advanced Materials

Abstract:Observation of a new type of nanoscale ferroelectric domains, termed as "bubble domains"-laterally confined spheroids of sub-10 nm size with local dipoles self-aligned in a direction opposite to the macroscopic polarization of a surrounding ferroelectric matrix-is reported. The bubble domains appear in ultrathin epitaxial PbZr0.2 Ti0.8 O3 /SrTiO3 /PbZr0.2 Ti0.8 O3 ferroelectric sandwich structures due to the interplay between charge and lattice degrees of freedom. The existence of the bubble domains is revealed by high-resolution piezoresponse force microscopy (PFM), and is corroborated by aberration-corrected atomic-resolution scanning transmission electron microscopy mapping of the polarization displacements. An incommensurate phase and symmetry breaking is found within these domains resulting in local polarization rotation and hence impart a mixed Néel-Bloch-like character to the bubble domain walls. PFM hysteresis loops for the bubble domains reveal that they undergo an irreversible phase transition to cylindrical domains under the electric field, accompanied by a transient rise in the electromechanical response. The observations are in agreement with ab-initio-based calculations, which reveal a very narrow window of electrical and elastic parameters that allow the existence of bubble domains. The findings highlight the richness of polar topologies possible in ultrathin ferroelectric structures and bring forward the prospect of emergent functionalities due to topological transitions.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Ferroelectric Ordering in Nanosized PbTiO 3 .

Tianyu Li

DOI: https://doi.org/10.1021/acs.nanolett.2c03303

IF: 10.8

2022-01-01

Nano Letters

Abstract:The insight into the three-dimensional configuration of ferroelectric ordering in ferroelectric nanomaterials is motivated by the application of the development of functional nanodevices and the structural designing. However, the atomic deciphering of the spatial distribution of ordered structure remains challenging for the limitation of dimension and probing techniques. In this paper, a neutron pair distribution function (nPDF) was utilized to analyze the spontaneous polarization distribution of zero-dimensional PbTiO nanoparticles in three dimensions, via the application of reverse Monte Carlo (RMC) modeling. The comprehensive identification with transmission electron microscopy verified the linear characteristics of polarization along the -axis in the main body, while electric polarization distribution on the surface was enhanced abnormally. In addition, the correlation of dipole vectors extending to three unit cells below the surface is retained. This work shows an application of the micro/macroscale information to effectively decode the polarization structure of nanoferroelectrics, providing new views of designing nanoferroelectric devices.
One-Step Mask Etching Strategy Toward Ordered Ferroelectric Pb(Zr 0.52 Ti 0.48 )O 3 Nanodot Arrays

Xiaoyan Zhang,Mengyang Kang,Kangrong Huang,Fengyuan Zhang,Sixian Lin,Xingsen Gao,Xubing Lu,Zhang,Junming Liu

DOI: https://doi.org/10.1186/s11671-015-1028-7

2015-01-01

Nanoscale Research Letters

Abstract:In this report, ordered lead zirconate titanate Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) nanodot arrays were fabricated by an original one-step mask etching route. The one-step mask etching strategy is based on the patterned nanostructure of barrier layer (BL) at the bottom of anodic aluminum oxide (AAO), by a direct transfer of the nanopattern from BL to the pre-deposited PZT film, without introduction of any sacrifice layer and lithography. Therefore, the presented strategy is relatively simple and economical. X-ray diffraction and Raman analysis revealed that the as-prepared PZT was in a perovskite phase. Atomic and piezoresponse force microscopy indicated that the PZT nanodot arrays were with both good ordering and well-defined ferroelectric properties. Considering its universality on diverse substrates, the present method is a general approach to the high-quality ordered ferroelectric nanodot arrays, which is promising for applications in ultra-high density nonvolatile ferroelectric random access memories (NV-FRAM).
Ferroelectricity in thin films: Critical thickness and 180° stripe domains

Zhongqing Wu,Ningdong Huang,Zhirong Liu,Jian Wu,Wenhui Duan,Bing-Lin Gu,Xiao-Wen Zhang

IF: 3.7

2004-01-01

Physical Review B

Abstract:The ferroelectric properties of disorder Pb (Zr 0.5 Ti 0.5) O 3 thin films are investigated with Monte Carlo simulations on the basis of a first-principles-derived Hamiltonian. It is found that there exists a critical thickness of about three unit cells (∼ 12 Å) below which the ferroelectricity disappears under the condition that the in-plane polarizations are suppressed by sufficient clamping effect. Above the critical thickness, periodic 180 stripe domains with out-of-plane polarizations are formed in the systems in order to minimize the energy of the depolarizing field. The stripe period increases with increasing film thickness. The microscopic mechanism responsible for these phenomena is discussed.
Controlled stripes of ultrafine ferroelectric domains

Ludwig Feigl,Petr Yudin,Igor Stolichnov,Tomas Sluka,Konstantin Shapovalov,Mahamudu Mtebwa,Cosmin S. Sandu,Xian-Kui Wei,Alexander K. Tagantsev,Nava Setter

DOI: https://doi.org/10.1038/ncomms5677

IF: 16.6

2014-08-14

Nature Communications

Abstract:In the pursuit of ferroic-based (nano)electronics, it is essential to minutely control domain patterns and domain switching. The ability to control domain width, orientation and position is a prerequisite for circuitry based on fine domains. Here, we develop the underlying theory towards growth of ultra-fine domain patterns, substantiate the theory by numerical modelling of practical situations and implement the gained understanding using the most widely applied ferroelectric, Pb(Zr,Ti)O3, demonstrating controlled stripes of 10 nm wide domains that extend in one direction along tens of micrometres. The observed electrical conductivity along these thin domains embedded in the otherwise insulating film confirms their potential for electronic applications.

multidisciplinary sciences
Ferroelectric Domain Structure Evolution In Ba(Zr0.1ti0.9)O-3/(Ba0.75ca0.25)Tio3 Heterostructures

Xiao Na Zhu,Xing Xu,Zach Harrell,Ruyan Guo,Amar S. Bhalla,Minghui Zhang,Jiechao Jiang,Chonglin Chen,Xiang Ming Chen

DOI: https://doi.org/10.1039/c5ra08672h

IF: 4.036

2015-01-01

RSC Advances

Abstract:Highly oriented multilayerd Ba(Zr0.1Ti0.9)O-3/(Ba0.75Ca0.25)TiO3 thin films were fabricated on Nb doped (001) SrTiO3 (Nb: STO) substrates by pulsed laser deposition. Microstructural characterization by X-ray diffraction indicates that the as-deposited multilayered thin films are highly c-axis oriented. Transmission electron microscopy shows that the films present epitaxial correspondence with the substrate at the first layer and multi-oriented twin domain structures near the surface, especially with increasing periodic number (N). Piezoresponse force microscopy (PFM) studies reveal an intense polarization component in the out-of-plane direction, which increases greatly with increasing periodic number (N), whereas the in-plane shows inferior phase contrast. The optimized combination was found to be the annealed 16 layer structure (N = 8, layer thickness = 712 nm) which displays the best polarization domain structures and the saturated piezo response loop. The annealing process benefits the 180 degrees domains with the same angle in the growth direction, which brings more piezo response in the in-plane signal. Our results suggest that the increasing of piezo response is greatly associated with the interface effect and the twining structure.

Nanoscale control of domain arrangements in Pb(Zr0.3,Ti0.7)O3 ferroelectric films

Nanoscale control of domain arrangements in Pb(Zr0.3,Ti0.7)O3 ferroelectric films

Nanoembossing and piezoelectricity of ferroelectric Pb(Zr 0.3,Ti0.7)O3 nanowire arrays

Ferroelectricity In Pb(Zr0.5ti0.5)O-3 Thin Films: Critical Thickness And 180 Degrees Stripe Domains

Influence of Nano-Embossing on Properties of Pb(Zr-0.3,Ti-0.7)O-3 Ferroelectric Thin Film

Fabrication of Nanostructured PZT Ferroelectric Thin Films and Their Characterization

Characterizations Of Nanoembossed Pb(Zr-0.3, Ti-0.7)O-3 Ferroelectric Films

Ferroelectric Nanostructures Fabricated by Dip-Coating Process and Microstructural Characterization by Scanning Transmission Electron Microscopy

Unusual Vortex Structure in Ultrathin Pb(Zr0.5ti0.5)O-3 Films

Patterning of large area nanoscale domains in as-grown epitaxial ferroelectric PbTiO3 films

Nano-embossing Technology on Ferroelectric Thin Film Pb(Zr0.3,Ti0.7)O3 for Multi-Bit Storage Application.

Controllable Microstructures and Multiferroic Properties of Pb(Zr0.53Ti0.47)O3–CoFe2O4 Composite Films

Nanoscale Domain Control in Multiferroic Bifeo3 Thin Films

Self-Organized Ferroelastic Superdomains with Enhanced Piezoresponse in (101)-Oriented Pb(Zr 0.2 ,Ti 0.8 )O 3 Thin Films

Nanopore-induced Dielectric and Piezoelectric Enhancement in PbTiO3 Nanowires

Nanoscale Bubble Domains and Topological Transitions in Ultrathin Ferroelectric Films

Ferroelectric Ordering in Nanosized PbTiO 3 .

One-Step Mask Etching Strategy Toward Ordered Ferroelectric Pb(Zr 0.52 Ti 0.48 )O 3 Nanodot Arrays

Ferroelectricity in thin films: Critical thickness and 180° stripe domains

Controlled stripes of ultrafine ferroelectric domains

Ferroelectric Domain Structure Evolution In Ba(Zr0.1ti0.9)O-3/(Ba0.75ca0.25)Tio3 Heterostructures