Effects of Vacancy Defects Caused by Non-Stoichiometric Ratio on Dielectric Properties of ABO3 Perovskite (ba0.5sr0.5)xtio3 Ceramics

Shiting Shen,Le Xin,Luchao Ren,Wei Wang,Jingjing Jin,Jiwei Zhai,Mingwei Zhang
DOI: https://doi.org/10.1016/j.ceramint.2020.01.232
IF: 5.532
2020-01-01
Ceramics International
Abstract:Non-stoichiometric Ba0.5Sr0.5TiO3 (BST50) ceramics with varying A/B ratios, namely (Ba + Sr)/Ti, were prepared by a conventional solid-state reaction approach. The effects of vacancy defects caused by varying the A/B ratio on the structure and dielectric properties of BST50 ceramics were systematically investigated. A remarkable change in grain size was found when the A/B ratio was increased, which led to apparent variations in the dielectric properties of the BST50 ceramics. The Curie temperature (Tc) and dielectric permittivity peak (εmax) increased first and then decreased with increasing A/B ratio, and reached the maximum at A/B = 1. Simultaneously, the dielectric diffusion parameter of BST50 ceramics was studied by the Lorenz-type formula. All samples exhibited diffusion phase transition behavior, and Tc was frequency independence. When A/B < 1, the Q value remained at a high level; in contrast, when A/B > 1, the Q value was significantly reduced. For this BST50 system, high tunability of 24.95% (at 30 kV/cm), low dielectric loss of 0.0017 (at 10 kHz), and high figure of merit (FOM) of 147 were achieved simultaneously at A/B = 1.01.
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