Abstract:The conductivity of hydrogen-terminated diamond is a limiting factor in its application in field-effect transistor devices. The traditional preparation process hinders the improvement of the electrical properties of hydrogen-terminated diamond due to impurity elements in the diamond bulk and surface damage caused by processing near the diamond surface. To overcome this, researchers have explored the epitaxial growth of a high-purity and flat-surfaced diamond thin film on a diamond substrate. However, this approach still faces challenges in film characterization and achieving high surface smoothness. In this study, microwave plasma chemical vapor deposition technology is used to epitaxially grow a sub-micron thick diamond film on a nitrogen-doping CVD diamond substrate measuring 10mm x 10mm x 0.5mm. The influence of methane concentrations on the growth and conductivity of diamond films is investigated. The test results reveal that the growth thickness of the diamond film ranges from 230 nm to 810 nm, and the nitrogen concentration in the epitaxial layer is lower than 1×10 16 Atom/cm 3 . Three growth modes are observed for the homoepitaxial growth of the diamond thin film under different methane concentrations. A methane concentration of 4% enables two-dimensional planar growth of diamond, resulting in a smooth and flat surface with a roughness of 0.225nm (10×10μm 2 ). The formation of different surface morphologies is attributed to the growth and etching processes of diamond. Surface LEED testing indicates that the surface of the diamond film undergoes a structural transition from oxygen terminals (1×1: O) to hydrogen terminals (2×1: H) when grown for a short period of time. XPS analysis reveals an extremely low proportion of oxygen and nitrogen elements, giving the grown diamond film P-type conductivity characteristics. The Hall test results demonstrate that the hydrogen-terminated diamond film grown with a methane concentration of 4% exhibits the highest conductivity, with a square resistance of 4981 Ω/□ and a hole mobility of 207 cm 2 /Vs. This enhanced conductivity can be attributed to the lower defect density observed under these specific conditions. The findings of this study contribute to the advancement and practical application of high-power diamond devices by effectively enhancing the electrical characteristics of hydrogen-terminated diamond.

Quasi Homoepitaxial Growth of Modified Diamond: Nickel-substrate Catalytic Multilayer Graphene Transforming to Diamond

Nickel-Mediated in Situ Growth Mechanism of Top-Layered Graphene in the Vicinity of Diamond Grain Boundary: A Theoretical Study

Simulation Research on Nucleation Mechanism of Graphene Deposition Assisted by Diamond Grain Boundary

Controlled Growth of Large-Area Monolayer Graphene on Ni (110) Facet: Insight from Molecular Dynamics Simulation

Unveiling the site-dependent characteristics and atomic mechanism of graphene growth on the polycrystalline diamond: Insight from the experiments and ReaxFF studies

Metal-induced rapid transformation of diamond into single and multilayer graphene on wafer scale

Multilayer graphene growth by a metal-catalyzed crystallization of diamond-like carbon

Low Temperature Preparation of the Monolayer-Graphene/diamond Heterostructure with Superior Mechanical Properties

Homoepitaxial overgrowth of (111) diamond films on Au-coated and Ni-coated substrates

Layer-controlled and wafer-scale synthesis of uniform and high-quality graphene films on a polycrystalline nickel catalyst

One-step Chemical Vapor Synthesis of Ni/graphene Nanocomposites with Excellent Electromagnetic and Electrocatalytic Properties

Recent Progress in Hetero-Epitaxial Growth of the Single-Crystal Diamond

Study on the Transformation of Diamond into Graphene Through High-Temperature Annealing

Effect of Annealing Temperature and Time on Ni-Catalyzed In Situ Growth of Graphene on Diamond Substrate

Diamond As an Inert Substrate of Graphene.

Rapid direct growth of graphene on single-crystalline diamond using nickel as catalyst

Epitaxial Combination of Two-Dimensional Hexagonal Boron Nitride with Single-Crystalline Diamond Substrate.

Catalysis Mechanism and Catalyst Design of Diamond Growth

Direct localized growth of graphene on substrate: a novel nickel-catalyzed CVD process assisted by H2 plasma

The Diamond (111) Surface Reconstruction and Epitaxial Graphene Interface

Growth and Surface Structrue Research of Hydrogen Terminal Diamond Thin Films