Abstract:In this work, we demonstrate the on-chip normally-off /on AlGaN/GaN HEMTs with the compatible fabrication processes. The normally-off HEMT utilizes a p-GaN gate to deplete the 2DEG channel, while the normally-on device adopts a MIS gate without the p-GaN layer. Supported by the devices fabrication, the normally-off/on devices are realized on one chip with the same processes. A threshold voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> ) of 2.5V and a drain current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> ) of 324mA/ mm are obtained in the normally-off p-GaN gate HEMT. And the normally-on MIS gate HEMT shows V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> =−3.3V and I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> =408mA/mm. Both of the two devices present the competitive I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> -V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> performances compared with the existing works. This feature suggests that the on-chip normally-off/on AlGaN/GaN HEMTs could be a promising candidate for GaN power integrated technologies.

A Highly Efficient Method to Fabricate Normally-off AlGaN/GaN HEMTs with Low Gate Leakage Via Mg Diffusion

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

Low-Mg out-diffusion of a normally off p-GaN gate high-electron-mobility transistor by using the laser activation technique

Normally-off GaN HEMTs with InGaN P-Gate Cap Layer Formed by Polarization Doping

High-performance Normally off AlGaN/GaN High Electron Mobility Transistor with P-Type H-Bn Cap Layer

Normally-Off P-Gan/Algan/Gan High Electron Mobility Transistors Using Hydrogen Plasma Treatment

High-performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High- $\kappa$ Dielectric

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

On-chip AlGaN/GaN HEMTs with the Compatible Normally-off p-GaN Gate and Normally-on MIS Gate Fabrication Processes

High-current-density high-voltage normally-off AlGaN/GaN hybrid-gate HEMT with low on-resistance

Fabrication of Normally off Algan/Gan Mosfet Using A Self-Terminating Gate Recess Etching Technique

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

High Voltage Normally-Off p-GaN Gate HEMT with the Compatible High Threshold and Drain Current

90 nm gate length enhancement-mode AlGaN/GaN HEMTs with plasma oxidation technology for high-frequency application

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering

High-performance normally off p-GaN gate high-electron-mobility transistor with In 0.17 Al 0.83 N barrier layer design

Over 1200 V Normally-OFF P-Nio Gated AlGaN/GaN HEMTs on Si with a Small Threshold Voltage Shift