Abstract:The ability of Ultra-Thin-Body (UTB) MOS devices to enable channel length scaling can only be realistically assessed by accurately taking key physical effects such as Quantum Confinement effects (QCEs) and Short channel effects (SCEs) into account. QCEs can accurately be considered only through a full band structure-based approach, which tends to be computationally inefficient, particularly at higher channel thicknesses, and is further exacerbated when required to be used to calculate 2-D channel electrostatics. Therefore, in this work, we propose a methodology to efficiently simulate the channel electrostatics of a UTB Double Gate MOSFET by solving the 1-D band structure with the 2-D Poisson's equation self consistently, determined by using the semi-empirical tight-binding approach only over those k-points that are likely to have a significant effect on the electrostatics. By showing that determining the 1-D Band structure at the source-channel junction is adequate to accurately determine the 2-D channel electrostatics, we show that this approach remains computationally tractable even at higher channel lengths. By following this approach, we obtain the 2-D profile of important device parameters such as electron density and channel potential, which, in turn, enables the determination of the thermionic current density and source-to-drain tunneling current density for a wide range of device parameters using Tsu-Esaki and WKB formalism respectively. Furthermore, the effect of phonon scattering, which is likely to manifest at longer channel lengths, is also incorporated in the drain current calculation, thus making this approach widely applicable.

Bulk Bias As an Analog Single-Event Transient Mitigation Technique with Negligible Penalty

A method to reduce process-related sensitivity in sub-threshold ICs and its circuit implementation

Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method

Layout Based Radiation Hardening Techniques Against Single-Event Transient

Single-Event Multiple-Transient Characterization and Mitigation via Alternative Standard Cell Placement Methods

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

Body Bias Effects on the Single-Event-Transient Response of PDSOI Devices

A Novel High-Speed Split-Gate Trench Carrier-Stored Trench-Gate Bipolar Transistor with Enhanced Short-Circuit Roughness

Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier

Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

A Novel Layout-Based Single Event Transient Injection Approach to Evaluate the Soft Error Rate of Large Combinational Circuits in Complimentary Metal-Oxide-Semiconductor Bulk Technology

Tcad Simulations Of Nano-Scale Functional Neuron Mosfets With Splitted Gate Bias On Floating Gate

A Source Segmented LDMOS Structure for Improving Single Event Burnout Tolerance Based on High-Voltage BCD Process

Computationally Efficient Band Structure-Based Approach for Accurately Determining Electrostatics and Source-to-Drain Tunneling Current in UTB MOSFETs

Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

SiC double-trench MOSFETs with source-recessed structure for enhanced ruggedness

The effect of anode emitter injection capability on characteristics of hybrid SIT-MOS transistors

Diagnosing Bias Runaway in Analog/mixed Signal Circuits

A New Type of Si-Based MOSFET for Radiation Reinforcement