Abstract:The transition metal dichalcogenides (MoS 2 etc.) are a new class of layered materials that can be prepared in variable layer thickness down to single molecular layer. Compared with the more well‐known graphene, the monolayer version of graphite, the transition metal dichalcogenides are semiconductors and hence can be more useful in applications such as light emission or photovoltaics where an energy gap is essential. Ultra thin transition metal dichalcogenides also show interesting layer thickness dependent physical properties. For example, the semiconductor gap was found to change from indirect to direct when the layer thickness is reduced to monolayer, making monolayer MoS 2 an efficient light emitter. Here we present investigation of the dimensionality of the joint density of states involved in the interband transition in MoS 2 using angle resolved as well as angle integrated electron energy loss spectroscopy [1]. To aid the analysis, we have extended the theory of joint density of states from three‐dimensional semiconductors to low‐dimensional semiconductors. Our result and analysis shows not only that the character of the interband transition changes from indirect to direct, as the layer thickness is reduced down to monolayer, as expected, but the indirect band gap retains a three dimensional character down to the monolayer limit. This is compared with the two dimensional character found for the direct bandgap transition in the monolayer MoSe and presumably also in MoS 2. This raised a question about the condition for observing a true two dimensional electronic structrue even when the atomic structure is reduced to single molecular thickness. We will discuss physical factors might affecting the dimensionality of the electronic density‐of‐states. Our result has practical implication. For example, it is consistent with the assumption made by Castellanos‐Gomez et al. [2] when interpreting the electrostatic screening effect observed in monolayer MoS 2 , which is very different from that of graphene. Our result also can explain the sensitivity of the indirect interband transition as a function of the layer thickness and the bandgap cross‐over of few layer MoS 2 from indirect to direct.

Anomalous Linear Layer-Dependent Blue Shift of Ultraviolet-Range Interband Transition in Two-Dimensional MoS2

Interlayer Couplings, Moiré Patterns, and 2D Electronic Superlattices in MoS 2 /wse 2 Hetero-Bilayers

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Is the electronic structure of few layer transition metal dichalcogenides always two dimensional ?

Layer-Dependent Anisotropic Electronic Structure Of Freestanding Quasi-Two-Dimensional Mos2

Dimensional cross-over of the bandgap transition in quasi-two-dimensional MoS2

Tuning Flat Bands by Interlayer Interaction, Spin-Orbital Coupling, and External Fields in Twisted Homotrilayer MoS_2

Anomalous Frequency Trends in MoS2 Thin Films Attributed to Surface Effects

Layer-dependent Chemically Induced Phase Transition of Two-dimensional MoS2.

Present status and perspective of two-dimensional layered molybdenum disulfide and its composites

Interlayer exciton emission in a MoS2/VOPc inorganic/organic van der Waals heterostructure.

Interlayer exciton emission in MoS2/VOPc inorganic/organic van der Waals heterostructure

Linearly Polarized Luminescence of Atomically-Thin MoS 2 Semiconductor Nanocrystals.

Layer-Dependent Electron Transfer and Recombination Processes in MoS2/WSe2 Multilayer Heterostructures.

Broadband Optical Properties Of Large-Area Monolayer Cvd Molybdenum Disulfide

Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide

Many-particle induced band renormalization processes in few- and mono-layer MoS 2

Electric Field Modulation of the Band Structure in MoS2/WS2 Van Der Waals Heterostructure

On Valence-Band Splitting in Layered MoS2

Emerging photoluminescence in monolayer MoS2.