Abstract:Abstract A comparable concentration of carriers injected and transported into the active region, that is, balanced hole and electron injection, significantly affects the optoelectronic performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). In this study, we introduce a novel structure characterized by a carrier injection balanced modulation layer, incorporating a polarization-regulating gradient p -AlGaN in a DUV LED. We conducted a systematic examination of its impact on the carrier injection and transport processes. Theoretical simulations demonstrate the mitigation of abrupt variations in Al content at the interface between electron blocking layer/ p -AlGaN and p -AlGaN/ p -GaN within the valence bands. Consequently, holes are more likely to be injected into the active region rather than accumulating at these interfaces. Meanwhile, due to the reduced barrier height at the top of the valence band, the holes were efficiently transported into the quantum well and confined with comparable and balanced concentrations of electrons by suppressing overflow, thereby promoting the radiative recombination rate. Compared with the conventional DUV LED, the hole concentration and radiative recombination rate of the designed structure in the final quantum well are significantly increased to 179.8% and 232.3%, respectively. The spontaneous emission intensity achieves nearly twice at the same current injection density. Moreover, the efficiency droop is significantly suppressed when operated at a gradually increasing current density. This study presents a promising approach that can serve as a reference for achieving high-efficiency AlGaN-based DUV LEDs.

Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes.

Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes

Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes with Lattice- Matched AlInGaN Insertion in N-Algan Layer

Double superlattice structure for improving the performance of ultraviolet light-emitting diodes

The Advantages of AlGaN-Based Ultraviolet Light-Emitting Diodes with Al Content Graded AlGaN Barriers

Improving the Current Spreading by Fe Doping in n-GaN Layer for GaN-Based Ultraviolet Light-Emitting Diodes

Conductivity-Modulated GaN-Based Ultraviolet Light-Emitting Diodes with Broadening Current Spreading Capability

Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure

Enhanced performance of AlGaN-based deep-UV LED by incorporating carrier injection balanced modulation layer synergistically with polarization-regulating structures

Modulating the Layer Resistivity by Band-Engineering to Improve the Current Spreading for DUV LEDs

Increasing the Carrier Injection Efficiency of GaN-Based Ultraviolet Light-Emitting Diodes by Double Al Composition Gradient Last Quantum Barrier and P-Type Hole Supply Layer

Significant Conductivity Enhancement in Al-rich N-Algan by Modulation Doping

Improving Performance of Algan‐Based Deep‐Ultraviolet Light‐Emitting Diodes by Inserting a Higher Al‐Content Algan Layer Within the Multiple Quantum Wells

Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes

High Performance of AlGaN Deep-Ultraviolet Light Emitting Diodes Due to Improved Vertical Carrier Transport by Delta-Accelerating Quantum Barriers

High efficiency and enhanced ESD properties of UV LEDs by inserting p-GaN/p-AlGaN superlattice

Enhancing the Luminous Efficiency of Ultraviolet Light Emitting Diodes by Adjusting the Al Composition of Pre-Well Superlattice

Advantages of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Graded Quantum Structures in the Active Region

Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

Improved the AlGaN-Based Ultraviolet LEDs Performance with Super-Lattice Structure Last Barrier