A High Power Density Two-Stage GaN-Based Isolated Bi-Directional DC-DC Converter

Shaokang Luan,Zongheng Wu,Zhiwei Wang,Xinmin Liu,Cai Chen,Yong Kang
DOI: https://doi.org/10.1109/ecce.2019.8912169
2019-01-01
Abstract:Gallium Nitride (GaN) high-electron-mobility transistor (HEMT) is widely used in isolated bi-directional DC-DC converters for electric vehicle charger, photovoltaic system, datacenter, etc. The trend of isolated bi-directional DC-DC converters is high efficiency, high frequency and high power density. In this paper, a 400W 400V/18V~25V two-stage GaN-based isolated bi-directional DC-DC converter is proposed. A low cost three PCBs stacked structure is proposed to design LLC transformer and Buck/Boost filter inductor. Finally, a standalone prototype converter is demonstrated to verify the front design. The prototype achieves peak closed-loop efficiency of 96.5%, closed-loop control error less than 1% and power density of 107W/in 3 .
What problem does this paper attempt to address?