Tuning Valley Polarization in Two-Dimensional Ferromagnetic Heterostructures

Yu-Yun Sun,Liyan Shang,Weiwei Ju,Yi-Peng An,Shi-Jing Gong,Ji-Qing Wang

DOI: https://doi.org/10.1039/c9tc04511b

IF: 6.4

2019-01-01

Journal of Materials Chemistry C

Abstract:Large and tunable valley polarization induced by magnetic proximity effect in MX2/Cr2Ge2Te6 (M = Mo, W; X = Se, Te) heterostructures.

What problem does this paper attempt to address?

Tunable Valley Polarization in a Multiferroic CuCrP2Te6 Monolayer

Xikui Ma,Lei Sun,Jian Liu,Xukun Feng,Weifeng Li,Jifan Hu,Mingwen Zhao

DOI: https://doi.org/10.1002/pssr.202000008

2020-01-01

Abstract:Valleytronic devices in which both the encoding and processing of information are achieved by manipulating electronic valley degrees of freedom are drawing increasing interest. However, materials with sizable intrinsic valley polarization are currently very rare. Using first-principles calculations, a promising 2D multiferroic CuCrP2Te6 monolayer with intrinsic valley and spin polarization is proposed. The valley splitting at the corners of the Brillouin zone (K and K ') with opposite Berry curvatures can be as large as 110.4 meV, which is quite promising for achieving an anomalous valley Hall effect. Moreover, such valley splitting can be tuned through different approaches, such as modulating the spin polarization and electric polarization and external strain. The interplay between valley and multiferroic properties reveled herein offers a unique strategy for the valleytronic device applications.
Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Huisheng Zhang,Wenjia Yang,Yaohui Ning,Xiaohong Xu

DOI: https://doi.org/10.1103/physrevb.101.205404

2020-01-01

Abstract:Manipulating the valley degree of freedom provides a novel paradigm for future valleytronics. Here we use first-principles approaches and the kp model analyses to carry out a comparative study of ten van der Waals (vdW) heterostructures constructed by transition-metal dichalcogenides and recently discovered twodimensional (2D) ferromagnetic (FM) insulators. Our calculations show that the MoTe2/CrBr3 heterostructure hosts a large valley splitting of similar to 28.7meV, which is much larger than that observed in the WSe2/CrI3 heterostructure (similar to 3.5meV). Specifically, the spin-orbital coupling can induce band inversions in WSe2/CrBr3 andMoTe(2)/CrBr3 heterostructures due to strong charge transfer across the interfaces of these two systems. Most strikingly, WSe2/CrBr3 is characterized as a valley-polarized quantum anomalous Hall effect system with Chern number C = -1 at the K point while C = 0 at the K' point. All those findings together with recent progress in 2D FM insulators point out an experimentally achievable scheme for exploration of abundant valley-polarized states in 2D FM vdW heterostructures.
Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor

Tongyao Zhang,Siwen Zhao,Anran Wang,Zhiren Xiong,Yingjia Liu,Ming Xi,Songlin Li,Hechang Lei,Zheng Vitto Han,Fengqiu Wang

DOI: https://doi.org/10.1002/adfm.202204779

IF: 19

2022-06-17

Advanced Functional Materials

Abstract:In this paper, by contacting a monolayer MoSe2 with a 2D ferromagnetic semiconductor Cr2Ge2Te6, a novel spin‐valley functional device that exhibits both electrical and magnetic tunability is demonstrated. This provides a new physical knob that may effectively manipulate the spin‐valley polarization in the device context. The emergence of atomically thin valleytronic semiconductors and 2D ferromagnetic materials is opening up new technological avenues for future information storage and processing. A key fundamental challenge is to identify physical knobs that may effectively manipulate the spin‐valley polarization, preferably in the device context. Here, a novel spin functional device that exhibits both electrical and magnetic tunability is fabricated, by contacting a monolayer MoSe2 with a 2D ferromagnetic semiconductor Cr2Ge2Te6. Remarkably, the valley‐polarization of MoSe2 is found to be controlled by a back‐gate voltage with an appreciably enlarged valley splitting rate. At fixed gate voltages, the valley‐polarization exhibits magnetic‐field and temperature dependence that corroborates well with the intrinsic magnetic properties of Cr2Ge2Te6, pointing to the impact of magnetic exchange interactions. Due to the interfacial arrangement, the charge‐carrying trion photoemission predominates in the devices, which may be exploited to enable drift‐based spin‐optoelectronic devices. These results provide new insights into valley‐polarization manipulation in transition metal dichalcogenides by means of ferromagnetic semiconductor proximitizing and represent an important step forward in devising field‐controlled 2D magneto‐optoelectronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

Haihong Zheng,Biao Wu,Chang-Tian Wang,Shaofei Li,Jun He,Zongwen Liu,Jian-Tao Wang,Guoqiang Yu,Ji-An Duan,Yanping Liu

DOI: https://doi.org/10.1007/s12274-023-5865-x

IF: 9.9

2023-07-01

Nano Research

Abstract:Exploiting the valley degrees of freedom as information carriers provides new opportunities for the development of valleytronics. Monolayer transition metal dichalcogenides (TMDs) with broken space-inversion symmetry exhibit emerging valley pseudospins, making them ideal platforms for studying valley electronics. However, intervalley scattering of different energy valleys limits the achievable degree of valley polarization. Here, we constructed WSe 2 /yttrium iron garnet (YIG) heterostructures and demonstrated that the interfacial magnetic exchange effect on the YIG magnetic substrate can enhance valley polarization by up to 63%, significantly higher than that of a monolayer WSe 2 on SiO 2 /Si (11%). Additionally, multiple sharp exciton peaks appear in the WSe 2 /YIG heterostructures due to the strong magnetic proximity effect at the magnetic–substrate interface that enhances exciton emission efficiency. Moreover, under the effect of external magnetic field, the magnetic direction of the magnetic substrate enhances valley polarization, further demonstrating that the magnetic proximity effect regulates valley polarization. Our results provide a new way to regulate valley polarization and demonstrate the promising application of magnetic heterojunctions in magneto-optoelectronics.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Giant and tunable valley degeneracy splitting in MoTe2

Jingshan Qi,Xiao Li,Qian Niu,Ji Feng

DOI: https://doi.org/10.1103/PhysRevB.92.121403

2015-04-17

Abstract:Monolayer transition-metal dichalcogenides possess a pair of degenerate helical valleys in the band structure that exhibit fascinating optical valley polarization. Optical valley polarization, however, is limited by carrier lifetimes of these materials. Lifting the valley degeneracy is therefore an attractive route for achieving valley polarization. It is very challenging to achieve appreciable valley degeneracy splitting with applied magnetic field. We propose a strategy to create giant splitting of the valley degeneracy by proximity-induced Zeeman effect. As a demonstration, our first principles calculations of monolayer MoTe$_2$ on a EuO substrate show that valley splitting over 300 meV can be generated. The proximity coupling also makes interband transition energies valley dependent, enabling valley selection by optical frequency tuning in addition to circular polarization. The valley splitting in the heterostructure is also continuously tunable by rotating substrate magnetization. The giant and tunable valley splitting adds a readily accessible dimension to the valley-spin physics with rich and interesting experimental consequences, and offers a practical avenue for exploring device paradigms based on the intrinsic degrees of freedom of electrons.

Materials Science,Mesoscale and Nanoscale Physics
Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Ningbo Li,Jiayong Zhang,Yang Xue,Tong Zhou,Zhongqin Yang

DOI: https://doi.org/10.1039/c7cp07610j

IF: 3.3

2018-01-01

Physical Chemistry Chemical Physics

Abstract:On the basis of valley degree of freedom, there would be immense potential application in valleytronics. Introducing magnetism into triangular or hexagonal lattices is a promising route to realize valley polarization, which is indispensable for applying the valley degree of freedom. In this study, we explored valley polarization by depositing a heterostructure of a MoTe2 monolayer on the (0 0 1) surface of an antiferromagnetic RbMnCl3 substrate. First principles-calculations showed that due to proximity-induced Zeeman effects, the MoTe2 monolayer was drastically magnetized by the topmost Mn layer in the substrate and a very large valley splitting (about 109 meV) was achieved. Using an effective Hamiltonian model, the effect of the competition of the spin-orbit coupling (SOC) and exchange field in the system on the valley polarization was also investigated. The magnitude of the valley splitting was found to be limited by the smaller SOC value and the induced exchange field, providing information on the enhancement of the valley polarization. A device rudiment with an anomalous valley Hall effect is proposed.
Tunable Valley Polarization and Valley Orbital Magnetic Moment Hall Effect in Honeycomb Systems with Broken Inversion Symmetry

Zhigang Song,Ruge Quhe,Shunquan Liu,Yan Li,Ji Feng,Yingchang Yang,Jing Lu,Jinbo Yang

DOI: https://doi.org/10.1038/srep13906

2014-01-01

Abstract:In this Letter, a tunable valley polarization is investigated for honeycomb systems with broken inversion symmetry such as transition-metal dichalcogenide MX2 (M = Mo, W; X = S, Se) monolayers through elliptical pumping. Compared to circular pumping, elliptical pumping is a more universal and effective method to create coherent valley polarization. When two valleys of MX2 monolayers are doped or polarized, a novel anomalous Hall effect (called valley orbital magnetic moment Hall effect) is predicted. Valley orbital magnetic moment Hall effect can generate an orbital magnetic moment current without the accompaniment of a charge current, which opens a new avenue for exploration of valleytronics and orbitronics. Valley orbital magnetic moment Hall effect is expected to overshadow spin Hall effect and is tunable under elliptical pumping.
Chirality-Dependent Valley Polarization in Magnetic van der Waals Heterostructures via Spin-Selective Charge Transfer

Wei Wu,Mengyu Liu,Jiangpeng Zhou,Jin'an Li,Yuxiang Zhang,Feiya Xu,Xu Li,Yaping Wu,Zhiming Wu,Junyong Kang

DOI: https://doi.org/10.1021/acs.nanolett.4c00503

IF: 10.8

2024-05-17

Nano Letters

Abstract:Magnetic proximity interaction provides a promising route to manipulate the spin and valley degrees of freedom in van der Waals heterostructures. Here, we report a control of valley pseudospin in the WS(2)/MoSe(2) heterostructure by utilizing the magnetic proximity effect of few-layered CrBr(3) and, for the first time, observe a substantial difference in valley polarization of intra/interlayer excitons under different circularly polarized laser excitations, referred to as chirality-dependent...

materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied,chemistry, physical, condensed matter
Tunable Valley Polarization in Two-Dimensional H-HfI2/T-VBrCl Van Der Waals Heterostructure

Congling Bai,Jia Li,Can Yang,Xiaoli Liu,Ze Liu,Xiujuan Mao,Junjie Shi

DOI: https://doi.org/10.1016/j.commatsci.2023.112627

IF: 3.572

2024-01-01

Computational Materials Science

Abstract:The electronic band structure and valley splitting of monolayer H-HfI2 and H-HfI2/T-VBrCl heterostructure have been investigated by first principles calculations. The monolayer H-HfI2 exhibits valleytronic feature at K and K' points of the valence bands. The valley polarization in monolayer H-HfI2 arises from the magnetic proximity effect induced by T-VBrCl monolayer. The stacking configurations have a significant influence on the valley polarization of the H-HfI2/T-VBrCl heterostructure. The maximum valley polarization can be as high as -20 meV. It is possible to manipulate the magnitude of valley polarization by adjusting the layer spacing and applying biaxial strain. The Berry curvature between two valleys indicates that the H-HfI2/T-VBrCl heterostructure should be a potential candidate for valleytronic devices.
Multifield tunable valley splitting in two-dimensional MXene Cr$_2$COOH

Ping Li,Chao Wu,Cheng Peng,Mutian Yang,Wei Xun

2023-11-02

Abstract:Manipulation of the valley degree of freedom provides a novel paradigm in quantum information technology. Here, through first-principles calculations and model analysis, we demonstrate that monolayer Cr$_2$COOH MXene is a promising candidate material for valleytronics applications. We reveal that Cr$_2$COOH is a ferromagnetic semiconductor and harbors valley features. Due to the simultaneous breaking inversion symmetry and time-reversal symmetry, the valleys are polarized spontaneously. Moreover, the valley polarization is sizeable in both the valence and conduction bands, benefiting the observation of the anomalous valley Hall effect. More remarkably, the valley splitting can be effectively tuned by the magnetization direction, strain and ferroelectric substrate. More interestingly, the ferroelectric substrate Sc$_2$CO$_2$ can not only regulate the MAE, but also tune valley polarization state. Our findings offer a practical way for realizing highly tunable valleys by multiferroic couplings.

Materials Science,Mesoscale and Nanoscale Physics
Multifield Tunable Valley Splitting in Two-Dimensional MXene Cr_2COOH

Ping Li,Chao Wu,Cheng Peng,Mutian Yang,Wei Xun

DOI: https://doi.org/10.1103/physrevb.108.195424

2023-01-01

Abstract:Manipulation of the valley degree of freedom provides a novel paradigm in quantum information technology. Here, through first-principles calculations and model analysis, we demonstrate that monolayer Cr_2COOH MXene is a promising candidate material for valleytronics applications. We reveal that Cr_2COOH is a ferromagnetic semiconductor and harbors valley features. Due to the simultaneous breaking inversion symmetry and time-reversal symmetry, the valleys are polarized spontaneously. Moreover, the valley polarization is sizeable in both the valence and conduction bands, benefiting the observation of the anomalous valley Hall effect. More remarkably, the valley splitting can be effectively tuned by the magnetization direction, strain and ferroelectric substrate. More interestingly, the ferroelectric substrate Sc_2CO_2 can not only regulate the MAE, but also tune valley polarization state. Our findings offer a practical way for realizing highly tunable valleys by multiferroic couplings.
Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Xikui Ma,Yingcai Fan,Weifeng Li,Yangyang Li,Xiangdong Liu,Xian Zhao,Mingwen Zhao

DOI: https://doi.org/10.1039/d3nr03086e

IF: 6.7

2023-10-27

Nanoscale

Abstract:Spontaneous valley polarization, resulting from the magnetic proximity effect, holds tremendous potential for information processing and storage. This effect is highly sensitive to the interfacial electronic properties, encompassing both charge transitions and spin configurations. In this study, we propose the manipulation of valley splitting by leveraging the tunable magnetic proximity effect through sliding an inversion-symmetric antiferromagnetic (AFM-I) monolayer within TMDs/AFM-I/TMDs heterostructures. The presence of the antiferromagnetic monolayer enhances the robustness of the magnetic order during interlayer sliding. Notably, we demonstrate that the polarized stacking of the heterostructures enables the generation of intrinsic out-of-plane and in-plane electric polarization. Intriguingly, interlayer sliding not only reverses the out-of-plane and in-plane electric polarization but also alters the layer-resolved valley splitting, thereby contributing to the emergence of anomalous valley Hall effect and layer Hall effect. In addition, the manipulation of valleys remains consistent with both the valley optical selection rules and the intra/interlayer emission energy, which are contingent upon the interlayer sliding. The findings of this work hold promise for potential applications in the field of valleytronics.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Controllable Valley Polarization and Strain Modulation in 2D 2H-VS2/CuInP2Se6 Heterostructures

Fan Yang,Jing Shang,Liangzhi Kou,Chun Li,Zichen Deng

DOI: https://doi.org/10.3390/nano12142461

2022-07-18

Abstract:Two-dimensional (2D) transition metal dichalcogenides endow individually addressable valleys in momentum space at the K and K' points in the first Brillouin zone due to the breaking of inversion symmetry and the effect of spin-orbit coupling. However, the application of 2H-VS2 monolayer in valleytronics is limited due to the valence band maximum (VBM) located at the Γ point. Here, by involving the 2D ferroelectric (FE) CuInP2Se6 (CIPSe), the ferrovalley polarization, electronic structure, and magnetic properties of 2D 2H-VS2/CIPSe heterostructures with different stacking patterns and FE polarizations have been investigated by using first-principles calculations. It is found that, for the energetically favorable AB-stacking pattern, the valley polarization is preserved when the FE polarization of CIPSe is upwards (CIPSe↑) or downwards (CIPSe↓) with the splitting energies slightly larger or smaller compared with that of the pure 2H-VS2. It is intriguing that, for the FE CIPSe↑ case, the VBM is expected to pass through the Fermi energy level, which can be eventually achieved by applying biaxial strain and thus the valleytronic nature is turned off; however, for the CIPSe↓ situation, the heterostructure basically remains semiconducting even under biaxial strains. Therefore, with the influence of proper strains, the FE polar reversal of CIPSe can be used as a switchable on/off to regulate the valley polarization in VS2. These results not only demonstrate that 2H-VS2/CIPSe heterostructures are promising potential candidates in valleytronics, but also shed some light on developing practical applications of valleytronic technology.
Valley Manipulation by Sliding-Induced Tuning of the Magnetic Proximity Effect in Heterostructures.

Xikui Ma,Yingcai Fan,Weifeng Li,Yangyang Li,Xiangdong Liu,Xian Zhao,Mingwen Zhao

DOI: https://doi.org/10.1039/d3nr03086e

IF: 6.7

2023-01-01

Nanoscale

Abstract:Spontaneous valley polarization, resulting from the magnetic proximity effect, holds tremendous potential for information processing and storage. This effect is highly sensitive to the interfacial electronic properties, encompassing both charge transitions and spin configurations. In this study, we propose the manipulation of valley splitting by leveraging the tunable magnetic proximity effect through sliding an inversion-symmetric antiferromagnetic (AFM-I) monolayer within a TMD/AFM-I/TMD heterostructure. The presence of the antiferromagnetic monolayer enhances the robustness of the magnetic order during interlayer sliding. Notably, we demonstrate that the polarized stacking of the heterostructure enables the generation of intrinsic out-of-plane and in-plane electric polarization. Intriguingly, interlayer sliding not only reverses the out-of-plane and in-plane electric polarization but also alters the layer-resolved valley splitting, thereby contributing to the emergence of the anomalous valley Hall effect and the layer Hall effect. In addition, the manipulation of valleys remains consistent with both the valley optical selection rules and the intra/interlayer emission energy, which are contingent upon the interlayer sliding. The findings of this work hold promise for potential applications in the field of valleytronics.
Tunable valley polarization and high Curie temperature in two-dimensional GdF2/WSe2 van der Waals heterojunction

Xu Zhang,Kai Zhang,Yadong Zhu,Baozeng Zhou,X. C. Wang

DOI: https://doi.org/10.1039/d4cp03578j

IF: 3.3

2024-10-19

Physical Chemistry Chemical Physics

Abstract:Two-dimensional (2D) van der Waals (vdW) heterojunction have potential applications in spintronic devices owing to their unique electronic structure and properties. The 2D ferromagnetic material GdF2 formed by rare earth element (Gd) with 4f electron and fluorine has spontaneous valley polarization, perpendicular magnetic anisotropy and other excellent properties. The monolayer WSe2 has a similar structure to the monolayer GdF2, can be used to construct vdW heterojunction. The heterojunction not only retain the original excellent properties, but also generating new physical properties due to interfacial charge transfer and coupling. Therefore, this work studies the electronic structure, magnetic anisotropy energy and Curie temperature (Tc) of GdF2/WSe2 heterojunction. The GdF2/WSe2 heterojunction exhibits spontaneous valley polarization, and can be modulated by biaxial strain. Addition, the valley polarization can be regulated by applying external electric field and changing interface spacing. These results indicate that GdF2/WSe2 heterojunction can be used as promising platforms for the study of spintronics and valleytronic devices, and provide ideas for the development of new electronic devices.

chemistry, physical,physics, atomic, molecular & chemical
Tunable Valley Splitting and Anomalous Valley Hall Effect in VTe2/Ga2S3 Heterostructures

Xikui Ma,Xiaofei Shao,Yingcai Fan,Jian Liu,Xukun Feng,Lei Sun,Mingwen Zhao

DOI: https://doi.org/10.1039/d0tc03712e

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:The modulation of valley splitting is not only of fundamental interest but is also crucial to valleytronics. Generally, valley splitting stems from spin-orbit coupling and the absence of time-reversal symmetry, which are irreversible. In this work, we proposed another approach to achieve static and reversible valley splitting via an antiferromagnetic/ferroelectric heterostructure. The heterostructure is composed of an antiferromagnetic VTe2 bilayer deposited on a ferroelectric substrate (Ga2S3). The electric field of the ferroelectric substrate lifts the valley degeneracy, leading to valley splitting, which is dependent on the intensity of the electric field. With the increase of substrate thickness, the valley splitting of the VTe2 bilayer can attain 132 meV. More interestingly, both the Berry curvature and the carrier spin are reversed by switching the ferroelectric direction of the substrate, resulting in tunable anomalous valley Hall effect. Our computational results offer a promising strategy for all-electrical reading and writing memory devices.
Tunable valley splitting and anomalous valley Hall effect in VTe2/Ga2S3 heterostructures

Xikui Ma,Xiaofei Shao,Yingcai Fan,Jian Liu,Xukun Feng,Lei Sun,Mingwen Zhao

DOI: https://doi.org/10.1039/d0tc03712e

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:The modulation of valley splitting is not only of fundamental interest but is also crucial to valleytronics.
Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Xuejun Long,Xue Deng,Fulong Hu,Jing Xie,Bing Lv,Yangfang Liao,Wenzhong Wang

DOI: https://doi.org/10.1016/j.apsusc.2023.157111

IF: 6.7

2023-07-01

Applied Surface Science

Abstract:Information technology can be improved by using the magnetic proximity effect to control two-dimensional valleytronics. Ferrovalley materials attract wide attention because of spontaneous valley polarization and magnetism. Here, the first-principles density functional theory has been used to examine the valley characteristics of monolayer WSe2 caused by the ferrovalley VSe2 substrate. The results demonstrate that monolayer WSe2 experiences the largest spin and absolute valley splitting at energies of 466 and 8.223 meV, respectively. With the k•p model, the effective Zeeman magnetic field of 73.36 T was found for the most stable configuration. More intriguingly, due to the ferrovalley nature of VSe2 substrates, just one valley state at the K' point exhibits a single valley-dependent optical transition in WSe2/VSe2 heterostructure. Additionally, the strain is applied to modify the spin-valley splitting. With the in-plane strain effect, the sign-reversible with the reversed spin state is obtained in biaxial strain, and a fascinating type-I to type-III band alignment transition occurs in the WSe2/VSe2, which intensifies the valley splitting. In vertical strain, the pure spin-valley polarization of the WSe2/VSe2 heterostructure can be observed. Ferrovalley substrates provide new opportunities for valleytronics applications.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Tunable valley polarization in two-dimensional H-HfI 2 /T-VBrCl van der Waals heterostructure

Congling Bai,Jia Li,Can Yang,Xiaoli Liu,Ze Liu,Xiujuan Mao,Junjie Shi

DOI: https://doi.org/10.1016/j.commatsci.2023.112627

IF: 3.572

2023-11-08

Computational Materials Science

Abstract:The electronic band structure and valley splitting of monolayer H-HfI 2 and H-HfI 2 /T-VBrCl heterostructure have been investigated by first principles calculations. The monolayer H-HfI 2 exhibits valleytronic feature at K and K' points of the valence bands. The valley polarization in monolayer H-HfI 2 arises from the magnetic proximity effect induced by T-VBrCl monolayer. The stacking configurations have a significant influence on the valley polarization of the H-HfI 2 /T-VBrCl heterostructure. The maximum valley polarization can be as high as −20 meV. It is possible to manipulate the magnitude of valley polarization by adjusting the layer spacing and applying biaxial strain. The Berry curvature between two valleys indicates that the H-HfI 2 /T-VBrCl heterostructure should be a potential candidate for valleytronic devices.

materials science, multidisciplinary
Magnetically and electrically controllable valley splittings in MXene monolayers

Huiqian Wang,Li Liang,Xiaohui Wang,Xiaoyu Wang,Xiao Li

2023-07-07

Abstract:The modulation of the valley structure in two-dimensional valley materials is vital in the field of valleytronics. The multiferroicity provides possibility for multiple modulations of the valley, including the magnetic and electric means. Based on the first-principle calculations, we study the valley properties and associated manipulations of multiferroic Co$_2$CF$_2$ monolayers with different stacking patterns. Our calculations show that the Co$_2$CF$_2$ monolayer in the H$^{\prime}$ phase is a ferrovalley material, with sizable valley splittings. By rotating the magnetization direction, the valley splittings can be tuned for both the magnitude and sign. The electric field, driving the reversal of the electric polarization, can also change the magnitude of the valley splittings. Besides, a metastable T$^{\prime}$ phase exhibits valley splittings as well, of which the magnitude and sign can be simultaneously controlled by applied magnetic and electric fields. These findings offer a practical way for realizing highly tunable valleys by multiferroic couplings.

Materials Science,Mesoscale and Nanoscale Physics

Tuning Valley Polarization in Two-Dimensional Ferromagnetic Heterostructures

Tunable Valley Polarization in a Multiferroic CuCrP<sub>2</sub>Te<sub>6</sub> Monolayer

Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Electrically and Magnetically Tunable Valley Polarization in Monolayer MoSe2 Proximitized by a 2D Ferromagnetic Semiconductor

Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

Giant and tunable valley degeneracy splitting in MoTe2

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Tunable Valley Polarization and Valley Orbital Magnetic Moment Hall Effect in Honeycomb Systems with Broken Inversion Symmetry

Chirality-Dependent Valley Polarization in Magnetic van der Waals Heterostructures via Spin-Selective Charge Transfer

Tunable Valley Polarization in Two-Dimensional H-HfI2/T-VBrCl Van Der Waals Heterostructure

Multifield tunable valley splitting in two-dimensional MXene Cr$_2$COOH

Multifield Tunable Valley Splitting in Two-Dimensional MXene Cr_2COOH

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Controllable Valley Polarization and Strain Modulation in 2D 2H-VS2/CuInP2Se6 Heterostructures

Valley Manipulation by Sliding-Induced Tuning of the Magnetic Proximity Effect in Heterostructures.

Tunable valley polarization and high Curie temperature in two-dimensional GdF2/WSe2 van der Waals heterojunction

Tunable Valley Splitting and Anomalous Valley Hall Effect in VTe2/Ga2S3 Heterostructures

Tunable valley splitting and anomalous valley Hall effect in VTe<sub>2</sub>/Ga<sub>2</sub>S<sub>3</sub> heterostructures

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Tunable valley polarization in two-dimensional H-HfI 2 /T-VBrCl van der Waals heterostructure

Magnetically and electrically controllable valley splittings in MXene monolayers