Abstract:It is important to determine the effects of misfit dislocations and other defects on the domain structure, ferroelectricity, conductivity, and other physical properties of ferroelectric thin films to understand their ferroelectric and piezoelectric behaviors. Much attention has been given to ferroelectric PbTiO3/SrTiO3 or PbZr0.2Ti0.8O3/SrTiO3 heterointerfaces, at which improper ferroelectricity, a spin-polarized two-dimensional electron gas, and other physical phenomena have been found. However, those heterointerfaces were all (001) planes, and there has been no experimental studies on the growth of (010) PbTiO3/SrTiO3 heterointerface due to the 6.4% misfit between two materials. In this study, we selected an atomically flat (010) PbTiO3/SrTiO3 heterointerface grown using a two-step hydrothermal method as the research subject, and this is the first experimental report on that interface. Interfacial dislocations can play a significant role in causing dramatic changes in the Curie temperature and polarization distribution near the dislocation cores, especially when the size of a ferroelectric thin film is scaled down to the nanoscale. The results of previous studies on the effects of interfacial dislocations on the physical properties of ferroelectric thin films have been contradictory. Thus, this issue needs to be explored more deeply in the future. This study used aberration corrected scanning transmission electron microscopy (STEM) to study the atomic structure of a (010) PbTiO3/SrTiO3 heterointerface and found periodic misfit dislocations with a Burgers vector of a[001]. The extra planes at the dislocation cores could relieve the misfit strain between the two materials in the [001] direction and thus allowed the growth of such an atomically sharp heterointerface. Moreover, monochromated electron energy-loss spectroscopy with an atomic scale spatial resolution and high energy resolution was used to explore the charge distribution near the periodic misfit dislocation cores. The fine structure of the Ti L edge was quantitatively analyzed by linearly fitting the experimental spectra recorded at various locations near and at the misfit dislocation cores with the Ti3+ and Ti4+ reference spectra. Therefore, the accurate valence change of Ti could be determined, which corresponded to the charge distribution. The probable existence of an aggregation of electrons was found near the a[001] dislocation cores, and the density of the electrons calculated from the valence change was 0.26 electrons per unit cell. Based on an analysis of the fine structure of the oxygen K edge, it could be argued that the electrons aggregating at the dislocation cores came from the oxygen vacancies in the interior regions of the PbTiO3. This aggregation of electrons will probably increase the electron conductivity along the dislocation line. The physics of two-dimensional charge distributions at oxide interfaces have been intensively studied, however, little attention had been given to the one-dimensional charge distribution. Therefore, the results of this study can stimulate research interest in exploring the influence of the interfacial dislocations on the physics of ferroelectric heterointerfaces.

Effect of the Oxygen Vacancy on the Ferroelectricity of 90° Domain Wall Structure in PbTiO3: A Density Functional Theory Study

Hybrid Functional Study on the Ferroelectricity of Domain Walls with O-vacancies in PbTiO3

A first-principles study of oxygen vacancy pinning of domain walls in PbTiO3

Multiferroic Domain Walls in Ferroelectric PbTiO3 with Oxygen Deficiency.

First-principles Study of Nitrogen Doping and Oxygen Vacancy in Cubic PbTiO3

Negatively Charged In-Plane and Out-Of-Plane Domain Walls with Oxygen-Vacancy Agglomerations in a Ca-Doped Bismuth-Ferrite Thin Film

Interactions of charged domain walls and oxygen vacancies in BaTiO 3 : a first-principles study

Hybrid Hartree-Fock Density Functional Study Of Charged Point Defects In Ferroelectric Pbtio3

Absorption of 90° Domain Walls to Oxygen Vacancies Investigated Through Internal Friction Technique

Effects of Strain and Oxygen Vacancies on the Ferroelectric and Antiferrodistortive Distortions in Pbtio3/Srtio3 Superlattice

Collective Domain-Wall Pinning of Oxygen Vacancies in Bismuth Titanate Ceramics

Atomic-scale mapping of dipole frustration at 90° charged domain walls in ferroelectric PbTiO3 films

Periodic Misfit Dislocation And Electron Aggregation At (010) Pbtio3/Srtio3 Heterointerface

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Effects of Oxygen Vacancy on Ferroelectric Tunnel Junctions: an Ab Initio Study

Defect ordering and defect-domain wall interactions in PbTiO$_3$: A first-principles study

Establishing quasi-linear quadrupole functional topology by oxygen-vacancy engineering at a ferroelectric domain wall

Engineering Individual Oxygen Vacancies: Domain-Wall Conductivity and Controllable Topological Solitons

Photocatalytic Overall Water Splitting over PbTiO3 Modulated by Oxygen Vacancy and Ferroelectric Polarization

Oxygen vacancies in BaTiO3 based ferroelectrics: electron doping, history dependence of Tc and domain wall pinning

Phase-field theory study on the modulation mechanism of oxygen vacancy concentration on charged domain wall in ferroelectric thin films