Abstract:Phase engineering of two-dimensional (2D) transition metal dichalcogenides (TMDs) such as MoTe2 offers tremendous opportunities in various device applications. However, most of the existing methods so far only address the small-area local phase change or the growth of certain kinds of phases of MoTe2 film by laser irradiation, mechanical strain, or procursor type. Obtaining facile, tunable, reversible, and continuous-phase transition and evolution between different phases in direct growth of large-area, few-layer MoTe2 still remains challenging. Here, we develop a facile method to achieve phase control and transition and report a highly tunable, tellurization velocity-dependent metallic-semiconducting-metallic phase evolution in chemical vapor deposition (CVD) growth of large-area, few-layer MoTe2. We found four different phase stages, including two different types of coexistence phases of both 2H and 1 T' phases, 100% 2H phase, and 100% 1T' phase, would emerge, relying on the adopted tellurization velocity. Importantly, the tellurization velocity should be extremely controlled to obtain 100% 2H phase MoTe2, while 100% 1T' phase requires a fast tellurization velocity. We further found that such metallic-semiconducting-metallic phase evolution took place with a homogeneous spatial distribution and differs from previous reports in which obvious phase separations are usually found during the phase transition. The resulting MoTe2 shows high quality with room-temperature mobility comparable with mechanically exfoliated materials. The results might impact large-scale phase engineering of TMDs and other 2D materials for Weyl semimetal topological physics and potential 2D semiconductor device applications.

2H/1T′ Phase WS2(1−x)Te2x Alloys Grown by Chemical Vapor Deposition with Tunable Band Structures

Semiconductors: Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys (adv. Mater. 17/2014)

Fabrication and Optical Performance of Mo1-xWxS2 Monolayer with Different Composition Ranges Via One-Step Chemical Vapor Deposition Approach

Hydrogen-assisted Post-Growth Substitution of Tellurium into Molybdenum Disulfide Monolayers with Tunable Compositions

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

Structural Evolution of Atomically Thin 1t’‐mote2 Alloyed in Chalcogen Atmosphere

Large-area synthesis of continuous two-dimensional MoTexSe2-x alloy films by chemical vapor deposition

Alloy-buffer-controlled van der Waals epitaxial growth of aligned tellurene

Anisotropic Ordering in 1T' Molybdenum and Tungsten Ditelluride Layers Alloyed with Sulfur and Selenium

Phase-Controlled Synthesis of Monolayer W1- X Rex S2 Alloy with Improved Photoresponse Performance.

Phase-Controllable Chemical Vapor Deposition Synthesis of Atomically Thin MoTe2

Controlled synthesis of MoxW1-xTe2 atomic layers with emergent quantum states

Controllable phase modulation and electronic structures of monolayer MoSe2xTe2(1−x) alloys grown via molecular beam epitaxy

Dramatically Enhanced Valley‐Polarized Emission by Alloying and Electrical Tuning of Monolayer WTe 2 x S 2(1‐ x ) Alloys at Room Temperature with 1T′‐WTe 2 ‐Contact

Controlling transition metal atomic ordering in two-dimensional Mo$_{1-x}$W$_{x}$S$_{2}$ alloys

Tellurization Velocity-Dependent Metallic-Semiconducting-Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2.

Charge tunable structural phase transitions in few-layer tellurium: a step toward building mono-elemental devices

Phase-engineered synthesis of atomically thin te single crystals with high on-state currents

Large-Area Synthesis of Layered HfS2(1- x )Se2 x Alloys with Fully Tunable Chemical Compositions and Bandgaps

Phase Transition and Electronic Structure Evolution of MoTe2 Induced by W Substitution

Synthesis of component-controllable monolayer MoxW(1- x)S2 ySe2(1- y) alloys with continuously tunable band gap and carrier type