Abstract:<div class="abstract-group"> <section class="article-section article-section__abstract" lang="en" data-lang="en" id="section-1-en"> <h3 class="article-section__header main abstractlang_en main">Abstract</h3> <div class="article-section__content en main"> <p>With the progress in silicon circuit miniaturization, lowering power consumption becomes the major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by the physical barrier termed “Boltzmann Tyranny.” Moreover, considerable heat is inevitably generated from the ultrahighly integrated circuit. To solve these problems, a ferroelectric negative capacitance field‐effect transistor (Fe‐NCFET) is proposed in order to reduce the subthreshold swing (SS) through internal voltage amplification mechanism, thus effectively scaling the supply voltage and significantly lowering the power dissipation of ULSI. In this Review, representative research results on NCFET are comprehensively reviewed to offer benefits for further study. Here, the background and significance of NCFETs are introduced, and the physical essence of negative capacitance effect is reviewed. Then, physical models and simulation methods of NCFETs are classified and discussed under the consideration of three basic gate structures. Several influencing factors of device performance such as SS, on‐off ratio, and hysteresis, are also theoretically analyzed. Moreover, the experimental results of NCFETs based on different ferroelectric materials are summarized. Finally, with the combination of NC effect and two‐dimentional materials, FinFET, and tunneling FET, respectively, several novel and potential NCFETs are presented, and the outlook of NCFETs is proposed. </p>

Utilization of Negative-Capacitance FETs to Boost Analog Circuit Performances

Enabling Energy-Efficient Nonvolatile Computing with Negative Capacitance FET

Influence of Body Effect on Sample-and-Hold Circuit Design Using Negative Capacitance FET

Delay and Power Evaluation of Negative Capacitance Ferroelectric Mosfet Based on Spice Model

Circuit Level Implementation of Negative Capacitance Source Pocket Double Gate Tunnel FET for Low Power Applications

NCFET Based Logic for Energy Harvesting Systems

Negative Capacitance as Digital and Analog Performance Booster for Complementary MOS Transistors

Analysis of Using Negative Capacitance FETs to Optimize Linearity Performance for Voltage Reference Generators

New Understanding of Negative Capacitance Devices for Low-Power Logic Applications

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

A Novel Negative Capacitance Tunnel FET with Improved Subthreshold Swing and Nearly Non-Hysteresis Through Hybrid Modulation

Negative Capacitance Junctionless FinFET for Low Power Applications: An Innovative Approach

Analysis of DIBL Effect and Negative Resistance Performance for NCFET Based on a Compact SPICE Model

Use of negative capacitance to provide voltage amplification for low power nanoscale devices

A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications

Negative Capacitance Tunnel Field Effect Transistor: A Novel Device with Low Subthreshold Swing and High ON Current

Beyond Moore's law – A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics

Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Advancing Nonvolatile Computing with Nonvolatile NCFET Latches and Flip-Flops.

Van der Waals negative capacitance transistors

Ferroelectric Negative Capacitance Field Effect Transistor