Abstract:The competition between charge recombination and extraction principally affects the fill factor (FF) and power conversion efficiency (PCE) of planar thin-film solar cells. In Sb2S3 thin-film solar cells, the electrocharge recombination and extraction n transport layer (ETL) plays a significant role in electron extraction and determination of Sb2S3 film absorber quality. Herein, a TiO2 ETL is strategically modified using an inorganic salt zinc halide (i.e., ZnCl2, ZnBr2, ZnI2), which simultaneously improves the electronic properties of TiO2 and promotes the growth of Sb2S3 films with larger grain size and higher crystallinity. The experimental results and theoretical calculations further reveal that the zinc halide can interact with TiO2 and simultaneously bond strongly with the upper Sb2S3 film, which creates a unique pathway for electron transfer, passivates the trap states, and alleviates the recombination losses effectively. As a result, an average PCE of 6.87 ± 0.11% and the highest PCE of 7.08% have been attained with an improved FF from 51.22 to 61.61% after ZnCl2 introduction. Additionally, introduction of ZnCl2 helps the unencapsulated devices to maintain 93% of their original performance after 2400 h of storage in a nitrogen-filled glovebox. This work develops an effective route for the optimization of ETLs and defect healing using simple and low-cost inorganic salts.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c11550?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c11550</a>.Device structure, modification process, and the morphology of the ETLs; XPS and UPS characterizations; dark J–V measurement of electron-only devices; side and top views of the most stable structures of zinc halide–TiO2; side and top views of isosurfaces for charge density differences; schematic diagram of ZnCl2 function between the TiO2 and Sb2S3; SEM-EDS mapping images of the ZnCl2–TiO2 film; conductivity measurements of different TiO2; SEM morphologies and XRD patterns of Sb2S3 films deposited on different substrates; EBSD map of the ZnCl2–TiO2-based Sb2S3 film; contact angles of Sb2S3 precursor solution on different TiO2; side and top views of the most stable structures of zinc halide–Sb2S3; photovoltaic characteristics of the Sb2S3 devices; electronic characteristics of the Sb2S3 devices; VOC dependence on light intensity; schematic band alignment between Sb2S3 and different ETLs; 1/C2 versus V curves; Nyquist plots of Sb2S3 devices; TPV decay characteristics; the stabilities of Sb2S3 devices stored in a nitrogen-filled glovebox at room temperature in the dark without any encapsulation (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c11550/suppl_file/am0c11550_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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