Abstract:The transition-metal dichalcogenide 1T-TaS2 exhibits a rich set of charge-density-wave (CDW) orders. Recent investigations suggested that using light or an electric field can manipulate the commensurate CDW (CCDW) ground state. Such manipulations are considered to be determined by charge-carrier doping. Here we use first-principles calculations to simulate the carrier-doping effect on the CCDW in 1T-TaS2. We investigate the charge-doping effects on the electronic structures and phonon instabilities of the 1T structure, and we analyze the doping-induced energy and distortion ratio variations in the CCDW structure. We found that both in bulk and monolayer 1T-TaS2, the CCDWis stable upon electron doping, while hole doping can significantly suppress the CCDW, implying different mechanisms of such reported manipulations. Light or positive perpendicular electric-field-induced hole doping increases the energy of the CCDW, so that the system transforms to a nearly commensurate CDW or a similar metastable state. On the other hand, even though the CCDW distortion is more stable upon in-plane electric-field-induced electron injection, some accompanied effects can drive the system to cross over the energy barrier from the CCDW to a nearly commensurate CDW or a similar metastable state. We also estimate that hole doping can introduce potential superconductivity with a Tc of 6-7 K. Controllable switching of different states such as a CCDW/Mott insulating state, a metallic state, and even a superconducting state can be realized in 1T-TaS2. As a result, this material may have very promising applications in future electronic devices.

Realization of a Metallic State in 1T−TaS2 with Persisting Long-Range Order of a Charge Density Wave

Modulation of electronic state in copper-intercalated 1T-TaS 2

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Dominant Charge Density Order in TaTe4

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T-TaS2

Real-space hole-doping titration and manipulation of correlated charge density wave state in 1T-TaS2

Beyond Conventional Charge Density Wave for Strongly Enhanced 2D Superconductivity in 1H-Tas2 Superlattices

Discovery of an Unconventional Charge Modulation on the Surface of Charge-Density-wave Material TaTe4

Intrinsic and Doping-Enhanced Superconductivity in Monolayer 1h−tas2 : Critical Role of Charge Ordering and Spin-Orbit Coupling

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T‐TaS2

Preferential out-of-plane conduction and quasi-one-dimensional electronic states in layered 1T-TaS2

Manipulating Charge Density Waves in 1T-Tas2 by Charge-Carrier Doping: A First-Principles Investigation

Anisotropic Superconductivity in the Topological Crystalline Metal Pb1/3TaS2 with Multiple Dirac Fermions

Endotaxial Stabilization of 2D Charge Density Waves with Long-range Order

Structure and Control of Charge Density Waves in Two-Dimensional 1T-TaS2

Dynamics of electronic states in the insulating Intermediate surface phase of 1T-TaS$_2$

Flat band physics in the charge-density wave state of $1T$-TaS$_2$

Nature of metallic and insulating domains in the CDW system 1T-TaSe2

Emergence of a Fermi-surface in the current-driven Hidden state of 1T-TaS$_2$

Robust charge-density wave strengthened by electron correlations in monolayer 1T-TaSe2 and 1T-NbSe2