Abstract:Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.

Effects of Recess Depths on Performance of AlGaN/GaN Power MIS-HEMTs on the Si Substrates and Threshold Voltage Model of Different Recess Depths for the Using HfO2 Gate Insulator

Comparative Study of Characteristics and Interface States with and Without Post‐Gate‐Annealing Treatment for AlGaN/GaN‐Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO2 Gate Insulator on Si Substrates

Investigation of high threshold voltage E-mode AlGaN/GaN MIS-HEMT with triple barrier layer

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics

Effective Suppression of Interface States in Recessed-Gate MIS-HEMTs by TMAH Wet Etching

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

High-Performance Enhancement-Mode Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN-on-Si MISFETs with 626 MW/<inline-formula> &Lt;tex-Math Notation="latex">$\mathrm{cm}^{2}$ &Lt;/tex-Math></inline-formula> Figure of Merit

Threshold Voltage Instability in III-nitride Heterostructure Metal–insulator–semiconductor High-Electron-mobility Transistors: Characterization and Interface Engineering

Comparative Study Between Partially and Fully Recessed‐Gate Enhancement‐Mode AlGaN/GaN MIS HEMT on the Breakdown Mechanism

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON As Composite Gate Dielectric

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

Enhancement-mode GaN HEMT using a combination structure of recessed-gate and p-GaN gate structure

1500 V AlGaN/GaN MIS-HEMTs Employing LPCVD-Si3N4 as Gate Insulator

Impacts of eliminating ungated access regions on DC and thermal performances of GaN-based MIS-HEMT

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si<sub>3</sub>N<sub>4</sub> Gate Dielectric and Standard Fluorine Ion Implantation

Normally-OFF AlGaN/GaN MOS-HEMT with a Two-Step Gate Recess

Impact of Al X Ga 1-X N Barrier Thickness and Al Composition on Electrical Properties of Ferroelectric HfZrO/Al 2 O 3 /algan/gan MFSHEMTs

16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator

Impact of Al<sub> <i>x</i> </sub>Ga<sub>1-<i>x</i> </sub>N barrier thickness and Al composition on the electrical properties of ferroelectric HfZrO/Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MFSHEMTs

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer