Abstract:Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.

Effective Suppression of Interface States in Recessed-Gate MIS-HEMTs by TMAH Wet Etching

Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 Nm Atomic Layer Deposition Al2O3 by Tetramethylammonium Hydroxide Wet Treatment

Comparative Study of Characteristics and Interface States with and Without Post‐Gate‐Annealing Treatment for AlGaN/GaN‐Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO2 Gate Insulator on Si Substrates

Control of Surface Chemistry in Recess Etching Towards Normally‐OFF GaN MIS‐HEMTs

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

AlGaN/GaN MIS-HEMTs of Very-Low ${v}_{\sf {{th}}}$ Hysteresis and Current Collapse with In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality

Effects of Recess Depths on Performance of AlGaN/GaN Power MIS-HEMTs on the Si Substrates and Threshold Voltage Model of Different Recess Depths for the Using HfO2 Gate Insulator

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON As Composite Gate Dielectric

Impacts of eliminating ungated access regions on DC and thermal performances of GaN-based MIS-HEMT

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment

Improving Gate Reliability of 6-in E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment

Fabrication of recessed-gate AlGaN/GaN MOSFETs using TMAH wet etching with Cu ion implantation

Threshold Voltage Instability in III-nitride Heterostructure Metal–insulator–semiconductor High-Electron-mobility Transistors: Characterization and Interface Engineering

Fabrication of High-Uniformity and High-Reliability Si 3 N 4 /algan/gan MIS-HEMTs with Self-Terminating Dielectric Etching Process in a 150-Mm Si Foundry

Normally-OFF AlGaN/GaN MIS-HEMTs With Low R ON and V th Hysteresis by Functioning In-situ SiN x in Regrowth Process

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

Effect of fluorinated graphene insulator on AlGaN/GaN MIS-HEMTs as gate dielectric