Abstract:Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as “ion-cut” or “Smart-Cut”. It is worth investigating the exfoliation efficiency and residual lattice defects in H-implanted SiC before and after annealing. In the present paper, lattice damage in the 6H-SiC implanted by H2+ to a fluence of 5 × 1016 H2+/cm2 at 450 and 900 °C was investigated by a combination of Raman spectroscopy and transmission electron microscopy. Different levels of damage caused by dynamic annealing were observed by Raman spectroscopy and transmission electron microscopy in the as-implanted sample. Atomic force microscopy and scanning white-light interferometry were used to observe the sample surface morphology. Surface blisters and exfoliations were observed in the sample implanted at 450 °C and then annealed at 1100 °C for 15 min, whereas surface blisters and exfoliation occurred in the sample implanted at 900 °C without further thermal treatment. This finding can be attributed to the increase in the internal pressure of platelets during high temperature implantation. The exfoliation efficiency, location, and roughness after exfoliation were investigated and possible reasons were discussed. This work provides a basis for further understanding and improving the high-efficiency “ion-cut” technology.

On the Study of Microstructure of Annealed C+and H2+ Co_implanted 6H-Sic

Research on the Surface Damage of Si+ and H+ Co-Implanted 6H-Sic Before and after Annealing

Microstructure of Hydrogen-Implanted Polycrystalline Α-Sic after Annealing

The Structural Evolution of Light-Ion Implanted 6H-Sic Single Crystal: Comparison of the Effect of Helium and Hydrogen

Implantation temperature and thermal annealing behavior in H 2 + -implanted 6H-SiC

Comparison of Cavities Formed in Single Crystalline and Polycrystalline Α-Sic after H Implantation

Study of Surface Exfoliation on 6H-Sic Induced by H2+ Implantation

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Microstructural Investigation of Single Crystal 6H-SiC Irradiated by He+ Ions and Annealed after Post-irradiation

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

Evolution of Strain and Mechanical Properties Upon Annealing in He-implanted 6H-Sic

Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

The Structural Evolution of Light-Ion Implanted into GaAs Single Crystal after Annealing

Recrystallization-Induced Surface Cracks Of Carbon Ions Irradiated 6h-Sic After Annealing

Optical Spectroscopy Study of Damage Evolution in 6H-Sic by H2+ Implantation

Recrystallization Phase in He-Implanted 6H-SiC

Atomistic Analysis on Implantation Effects of Hydrogen Ions and Copper Ions into 4H-Sic

Effects Of He+ And H+ Co-Implantation With High Energy On Blisters And Craters Of Si And Sio2-On-Si Wafers

Structural and Optical Properties of 6h–sic Helium-Implanted at 600 K

Microstructure Evolution in He-Implanted Si at 600 C Followed by 1000 C Annealing