Abstract:Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state quantum processors operate best, may solve some major scaling challenges, such as system size and input/output (I/O) data management [5]. Spin qubits in silicon quantum dots (QDs) could be monolithically integrated with complementary metal-oxide-semiconductor (CMOS) electronics using very-large-scale integration (VLSI) and thus leveraging over wide manufacturing experience in the semiconductor industry [6]. However, experimental demonstrations of integration using industrial CMOS at mK temperatures are still in their infancy. Here we present a cryogenic integrated circuit (IC) fabricated using industrial CMOS technology that hosts three key ingredients of a silicon-based quantum processor: QD arrays (arranged here in a non-interacting 3x3 configuration), digital electronics to minimize control lines using row-column addressing and analog LC resonators for multiplexed readout, all operating at 50 mK. With the microwave resonators (6-8 GHz range), we show dispersive readout of the charge state of the QDs and perform combined time- and frequency-domain multiplexing, enabling scalable readout while reducing the overall chip footprint. This modular architecture probes the limits towards the realization of a large-scale silicon quantum computer integrating quantum and classical electronics using industrial CMOS technology.

3D Integration of CMOS-Compatible Surface Electrode Ion Trap and Silicon Photonics for Scalable Quantum Computing

Multi-junction surface ion trap for quantum computing

Functional surface ion traps on a 12-inch glass wafer for quantum applications

Monolithic Microfabricated Symmetric Ion Trap for Quantum Information Processing

3D-Printed Micro Ion Trap Technology for Scalable Quantum Information Processing

Penning micro-trap for quantum computing

Multilayer ion trap technology for scalable quantum computing and quantum simulation

Cryogenic silicon surface ion trap

Commercial CMOS Process for Quantum Computing: Quantum Dots and Charge Sensing in a 22 nm Fully Depleted Silicon-on-Insulator Process

Industrially Microfabricated Ion Trap with 1 eV Trap Depth

Silicon Photonic Devices for Scalable Quantum Information Applications

Heterogeneous integration of spin–photon interfaces with a CMOS platform

A silicon-based ion trap chip protected from semiconductor charging

Optimized surface ion trap design for tight confinement and separation of ion chains

Integrated multi-wavelength control of an ion qubit

Multi-zone trapped-ion qubit control in an integrated photonics QCCD device

Heterogeneous integration of spin-photon interfaces with a scalable CMOS platform

Integrated multiplexed microwave readout of silicon quantum dots in a cryogenic CMOS chip

Fabrication of Surface Ion Traps with Integrated Current Carrying Wires enabling High Magnetic Field Gradients

A Site-Resolved 2D Quantum Simulator with Hundreds of Trapped Ions

High-fidelity trapped-ion qubit operations with scalable photonic modulators