Abstract:Under the framework of the first principles theory, the SnS2 based binary and ternary heterostructures including h-BN/SnS2, g-C3N4/SnS2, ZrS2/SnS2, h-BN/g-C3N4/SnS2, h-BN/ZrS2/SnS2, g-C3N4/h-BN/SnS2, g-C3N4/ZrS2/SnS2, ZrS2/h-BN/SnS2 and ZrS2/g-C3N4/SnS2 are systematically studied. The absolute values of lattice mismatches (vertical bar eta vertical bar) of binary and ternary heterostructures do not exceed 3.87% and 1.93%, respectively. The negative formation energies also prove the stable states. The band gaps of all the heterostructures are in the range of 1.44 eV-1.91 eV and suitable to water decompostion. The charge transfer in the h-BN/g-C3N4/SnS2, h-BN/ZrS2/SnS2, g-C3N4/h-BN/SnS2, g-C3N4/ZrS2/SrlS(2), ZrS2/h-BN/SnS2 and ZrS2/g-C3N4/SnS2 heterostructures are 3.66,1.12, 2.45, 0.57, 5.61 and 5.64 times as large as the charge transfer in the corresponding binary heterostructures. The heterostructures are sorted into Z-scheme, Type-I, Type-II/Z-scheme, Z-scheme/Type-I and Z-scheme/Z-scheme taking into account the synergistic effects of band edges and built-in electric field. Particularly, the Re and Ox centers are located in different layers of the heterostructures which can efficiently separate the photogenerated electron-hole pairs in space, and except ZrS2/SnS2, all the other heterostructures can be used to conduct spontaneous full water decomposition. Moreover, the ternary heterostructures have stronger absorption intensities with red shift absorption edges compared with the isolated nanosheets and binary heterostructures, which could be a better choice for enhanced photocatalytic performances under visible light. (C) 2020 Elsevier B.V. All rights reserved.

Prediction of electronic structures and transport properties of SnS2/BN heterostructures by the density functional theory

Stability and Electronic Properties of Hybrid SnO Bilayers: SnO/Graphene and SnO/BN

Effective Lattice Hamiltonian for Monolayer Tin Disulfide: Tailoring Electronic Structure with Electric and Magnetic Fields

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Effect of interlayer spacing on the electronic and optical properties of SnS2/graphene/SnS2 sandwich heterostructure: a density functional theory study

Stability and Electronic Structure of Two Dimensional Cx(BN)y Compound

On Transport Properties of CNT Metal/semiconductor/metal Heterostructures Using First Principles Methods

Electronic States and Photocatalytic Performances of SnS2-based Binary and Ternary Vdw Heterostructures

The electronic and magnetic properties of h-BN/MoS 2 heterostructures intercalated with 3d transition metal atoms

Charge transport and electron-hole asymmetry in low-mobility graphene/hexagonal boron nitride heterostructures

First-Principles Study of the Structural, Electronic, and Enhanced Optical Properties of SnS/TaS2 Heterojunction

Low-symmetry two-dimensional BNP 2 and C 2 SiS structures with high and anisotropic carrier mobilities

Carrier Mobility and Broadband Performance of Two-Dimensional Sb/SnSe Van Der Waals Heterostructure: A First-Principles Study

Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS2/Janus MoSSe van der Waals heterostructure

Tuning electronic properties and contact type in van der Waals heterostructures of bilayer SnS and graphene

Semi-metallicity and electron-hole liquid in two-dimensional C and BN based compounds

The electronic and magnetic properties of h-BN/MoS<sub>2</sub> heterostructures intercalated with 3d transition metal atoms

In-plane Heterostructures of Sb/Bi with High Carrier Mobility.

Half Metallic and Insulating Phases in BN/Graphene Lateral Heterostructures

Electronic Properties of Silicene in BN/silicene Van Der Waals Heterostructures