Abstract:Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1020 cm–3, thus limiting the maximum optical gain to a few dB/cm, too small to be useful for integrated photonic applications. Er compounds could potentially solve this problem since they contain much higher Er3+ density. So far the existing Er compounds suffer from short lifetime and strong upconversion effects, mainly due to poor crystal qualities. Recently, we explore a new Er compound: erbium chloride silicate (ECS, Er3(SiO4)2Cl) in the form of nanowire, which facilitates the growth of high quality single crystal with relatively large Er3+ density (1.62 × 1022 cm–3). Previous optical results show that the high crystal quality of ECS material leads to a long lifetime up to 1 ms. The Er lifetime-density product was found to be the largest among all the Er containing materials. Pump-probe experiments demonstrated a 644 dB/cm signal enhancement and 30 dB/cm net gain per unit length from a single ECS wire. As a result, such high-gain ECS nanowires can be potentially fabricated into ultra-compact lasers. Even though a single ECS nanowire naturally serves as good waveguide, additional feedback mechanism is needed to form an ultra-compact laser. In this work, we demonstrate the direct fabrication of 1D photonic crystal (PhC) air hole array structure on a single ECS nanowire using focused ion beam (FIB). Transmission measurement shows polarization-dependent stop-band behavior. For transverse electric (TE) polarization, we observed stop-band suppression as much as 12 dB with a 9 μm long airholed structure. Through numerical simulation, we showed that Q-factor as high as 11000 can be achieved at 1.53 μm for a 1D PhC micro-cavity on an ECS nanowire. Such a high Q cavity combined with the high material gain of ECS nanowires provides an attractive solution for ultra-compact lasers, an important goal of this research.

Low-Threshold Vertical Lasing from InP Nanowire Embedded in Cat's Eye Antenna

Vertically Emitting Indium Phosphide Nanowire Lasers.

Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers

Monolayer semiconductor nanocavity lasers with ultralow thresholds

Fiber-Integrated Reversibly Wavelength-Tunable Nanowire Laser Based on Nanocavity Mode Coupling.

All-Dielectric Nanolaser with Subnanometer Field Confinement

Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser

Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers

Deformed Honeycomb Lattices of InGaAs Nanowires Grown on Silicon‐on‐Insulator for Photonic Crystal Surface‐Emitting Lasers

Electrically‐Driven Photonic Crystal Lasers with Ultra‐low Threshold

Low threshold lasing from silicon Mie resonators

Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays

Lasers: Manipulable and Hybridized, Ultralow‐Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods (adv. Funct. Mater. 37/2017)

Design and Simulation of Low-Threshold Miniaturized Single-Mode Nanowire Lasers Combined with a Photonic Crystal Microcavity and Asymmetric Distributed-Bragg-Reflector Mirrors

Directional Lasing in Coupled InP Microring/Nanowire Systems

Lasing in robust cesium lead halide perovskite nanowires

Low-Threshold Multiwavelength Plasmonic Nanolasing in an "H"-Shape Cavity

Single Crystal Erbium Compound Nanowires As High Gain Material for On-Chip Light Source Applications

Electrically Driven Photonic Crystal Nanocavity Devices

On-Chip Ultralow-Threshold Tunable CdSSe Nanobelt Lasers Excited by the Emission of Linked ZnO Nanowire

High-gain Erbium Silicate Waveguide Amplifier and a Low-Threshold, High-Efficiency Laser.