Abstract:A universal identification method is in urgent need to reliably differentiate synthetic antiferromagnetic (SAF) skyrmions from ferromagnetic ones. The authors demonstrate the generation of a SAF skyrmion and investigate its motion with almost no skyrmion Hall effect. Furthermore, a universal identification method is proposed with the application of an out‐of‐plane field. Synthetic antiferromagnetic (SAF) skyrmions are emerging as novel information carriers due to their high mobility and lack of a skyrmion Hall effect. However, distinguishing SAF skyrmions from their ferromagnetic counterparts using imaging techniques like magneto‐optical microscopy remains challenging. While the suppressed intrinsic skyrmion Hall effect (SkHE) has been commonly used to identify SAF skyrmions, it is important to note that other factors such as defect pinning and dipolar interaction can also lead to a suppressed SkHE. Therefore, there is an urgent need for a universal identification method that can reliably differentiate SAF skyrmions from ferromagnetic ones. In this study, the generation of a SAF skyrmion within a standard SAF stack is demonstrated and its motion with almost no SkHE is investigated. Furthermore, a universal identification method is proposed wherein the application of an out‐of‐plane field allows the SAF skyrmion to be decoupled into two domains, which can either expand or contract with the application of an electric current. By expediting the development of a reliable means of identifying SAF skyrmions, these findings will accelerate the realization of practical applications based on these unique information carriers.

Manipulating skyrmions in synthetic antiferromagnetic nanowires by magnetic field gradients

Manipulating and Trapping Skyrmions by Magnetic Field Gradients

Interlayer coupling effect on skyrmion dynamics in synthetic antiferromagnets

Controllable Generation of Antiferromagnetic Skyrmions in Synthetic Antiferromagnets with Thermal Effect

Manipulation of synthetic antiferromagnetic skyrmion by reduced voltage via design of double interface structure

A Skyrmion Helicity-Based Multistate Memory in Synthetic Antiferromagnets

Mechanical Effect on Skyrmion-Skyrmion Interaction

Uniaxial Strain Modulation of the Skyrmion Phase Transition in Ferromagnetic Thin Films

Realization of Isolated and High-Density Skyrmions at Room Temperature in Uncompensated Synthetic Antiferromagnets

Antiferromagnetic Skyrmion: Stability, Creation and Manipulation

Manipulation of Skyrmion by Magnetic Field Gradients: A Stern-Gerlach-Like Experiment.

Dynamics of the antiferromagnetic skyrmion induced by a magnetic anisotropy gradient

Manipulation of Skyrmion Motion by Magnetic Field Gradients

Stabilization and adiabatic control of antiferromagnetically coupled skyrmions without the topological Hall effect

Suppression of the skyrmion Hall effect in synthetic ferrimagnets with gradient magnetization

Nano-engineering the evolution of skyrmion crystal in synthetic antiferromagnets

An Artificial Skyrmion Platform with Robust Tunability in Synthetic Antiferromagnetic Multilayers

Identifying and Exploring Synthetic Antiferromagnetic Skyrmions

Non-volatile Multi-State Magnetic Domain Transformation in a Hall Balance

A Synthetic Skyrmion Platform with Robust Tunability

Single-bit Full Adder and Logic Gate Based on Synthetic Antiferromagnetic Bilayer Skyrmions