Identifying and Exploring Synthetic Antiferromagnetic Skyrmions

Yuelei Zhao,Sheng Yang,Kai Wu,Shuang Li,Yang Gao,Hongyuan Hao,Xichao Zhang,Shouguo Wang,Qingfang Liu,Senfu Zhang,Zhiqin Chu,Johan Åkerman,Yan Zhou
DOI: https://doi.org/10.1002/adfm.202303133
IF: 19
2023-08-03
Advanced Functional Materials
Abstract:A universal identification method is in urgent need to reliably differentiate synthetic antiferromagnetic (SAF) skyrmions from ferromagnetic ones. The authors demonstrate the generation of a SAF skyrmion and investigate its motion with almost no skyrmion Hall effect. Furthermore, a universal identification method is proposed with the application of an out‐of‐plane field. Synthetic antiferromagnetic (SAF) skyrmions are emerging as novel information carriers due to their high mobility and lack of a skyrmion Hall effect. However, distinguishing SAF skyrmions from their ferromagnetic counterparts using imaging techniques like magneto‐optical microscopy remains challenging. While the suppressed intrinsic skyrmion Hall effect (SkHE) has been commonly used to identify SAF skyrmions, it is important to note that other factors such as defect pinning and dipolar interaction can also lead to a suppressed SkHE. Therefore, there is an urgent need for a universal identification method that can reliably differentiate SAF skyrmions from ferromagnetic ones. In this study, the generation of a SAF skyrmion within a standard SAF stack is demonstrated and its motion with almost no SkHE is investigated. Furthermore, a universal identification method is proposed wherein the application of an out‐of‐plane field allows the SAF skyrmion to be decoupled into two domains, which can either expand or contract with the application of an electric current. By expediting the development of a reliable means of identifying SAF skyrmions, these findings will accelerate the realization of practical applications based on these unique information carriers.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
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