Roméo Juge,Naveen Sisodia,Joseba Urrestarazu Larrañaga,Qiang Zhang,Van Tuong Pham,Kumari Gaurav Rana,Brice Sarpi,Nicolas Mille,Stefan Stanescu,Rachid Belkhou,Mohamad-Assaad Mawass,Nina Novakovic-Marinkovic,Florian Kronast,Markus Weigand,Joachim Gräfe,Sebastian Wintz,Simone Finizio,Jörg Raabe,Lucia Aballe,Michael Foerster,Mohamed Belmeguenai,Liliana Buda-Prejbeanu,Justin M. Shaw,Hans T. Nembach,Laurent Ranno,Gilles Gaudin,Olivier Boulle

Abstract:Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in tracks. Antiferromagnetic (AF) skyrmions allow these limitations to be lifted owing to their vanishing magnetization and net zero topological charge, promising room-temperature, ultrasmall skyrmions, fast dynamics, and insensitivity to external magnetic fields. While room-temperature AF spin textures have been recently demonstrated, the observation and controlled nucleation of AF skyrmions operable at room temperature in industry-compatible synthetic antiferromagnetic (SAF) material systems is still lacking. Here we demonstrate that isolated skyrmions can be stabilized at zero field and room temperature in a fully compensated SAF. Using X-ray microscopy techniques, we are able to observe the skyrmions in the different SAF layers and demonstrate their antiparallel alignment. The results are substantiated by micromagnetic simulations and analytical models using experimental parameters, which confirm the chiral SAF skyrmion spin texture and allow the identification of the physical mechanisms that control the SAF skyrmion size and stability. We also demonstrate the local nucleation of SAF skyrmions via local current injection as well as ultrafast laser excitations at zero field. These results will enable the utilization of SAF skyrmions in skyrmion-based devices.

Single-bit Full Adder and Logic Gate Based on Synthetic Antiferromagnetic Bilayer Skyrmions

Universal skyrmion logic gates and circuits based on antiferromagnetically coupled skyrmions without a topological Hall effect

Antiferromagnetic skyrmion-based logic gates controlled by electric currents and fields

Confinement and Protection of Skyrmions by Patterns of Modified Magnetic Properties.

Manipulation of synthetic antiferromagnetic skyrmion by reduced voltage via design of double interface structure

Magnetic Skyrmion Logic Gates: Conversion, Duplication and Merging of Skyrmions

Controllable Generation of Antiferromagnetic Skyrmions in Synthetic Antiferromagnets with Thermal Effect

Programmable skyrmion logic gates based on skyrmion tunneling

A Synthetic Skyrmion Platform with Robust Tunability

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Reconfigurable Skyrmion Logic Gates with Auto-Annihilating Skyrmion Function

Stabilization and adiabatic control of antiferromagnetically coupled skyrmions without the topological Hall effect

Realization of Isolated and High-Density Skyrmions at Room Temperature in Uncompensated Synthetic Antiferromagnets

Skyrmions-based Logic Gates in One Single Nanotrack Completely Reconstructed Via Chirality Barrier

Dynamic Behavior of Skyrmion: Spiral and Breath

Effects of Temperature and Structural Geometries on a Skyrmion Logic Gate

Ferroelectric Control of Magnetic Skyrmions in Multiferroic Heterostructures

Magnetic Bilayer-Skyrmions Without Skyrmion Hall Effect

Skyrmion based majority logic gate by voltage controlled magnetic anisotropy in a nanomagnetic device

Controlled Switching of the Number of Skyrmions in a Magnetic Nanodot by Electric Fields

Skyrmions in synthetic antiferromagnets and their nucleation via electrical current and ultrafast laser illumination