Anisotropic Growth of Electroless Nickel‑phosphorus Plating on Fine Sliver Lines for L-shape Terminal Electrode Structure of Chip Inductor

Kai Zhu,Yuanming Chen,Chaoying Ma,Wei He,Chong Wang,Shouxu Wang,Guoyun Zhou,Zhi Wang,Yaqing Liu,Yunzhong Huang,Weihua Zhang,Yukai Sun
DOI: https://doi.org/10.1016/j.apsusc.2019.143633
IF: 6.7
2019-01-01
Applied Surface Science
Abstract:The micron-size anisotropic growth of electroless nickel-phosphorus plating was realized on the fine sliver lines with the width of <= 15 mu m. Growth of nickel-phosphorus alloy occurred preferentially in the width direction at a growth rate approximately twice than that in the thickness direction during electroless plating in a bath with periodical positive and negative rotation. The growth rate in the width direction reaches 15-18 mu m in 30 min. The dominant nickel-phosphorus growth in the width direction is attributed to the enhancement of mass transfer rate for solution at the edge of silver lines or nickel-phosphorus layer, as a result of the better wettability of ceramic than Pd-activated silver and nickel-phosphorus layer. The suppression of lead acetate at the layer edge is enhanced by nonlinear diffusion instead of wettability difference. A possible mechanism for the formation of nickel-phosphorus layer morphology as functions of mass transfer and lead distribution was proposed to explain the growth behavior of anisotropic electroless nickel-phosphorus plating. Furthermore, this anisotropic electroless nickel-phosphorus plating process was employed to form a novel L-shape terminal electrode structure of chip inductor.
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