Influence of contact resistance on the electrical characteristics of organic static induction transistors

Yong Zhang,Shengyi Yang,Yurong Jiang,Bingsuo Zou
DOI: https://doi.org/10.1088/1361-6641/ab3818
IF: 2.048
2019-01-01
Semiconductor Science and Technology
Abstract:The influencing factors on the current-voltage (I-V) characteristics of organic static induction transistors (OSITs) are complicated and usually the underneath physical mechanism depends on many parameters. In this paper, firstly we come up with a typical OSIT model and summarize its theoretical equations to the I-V curves of pentacene-based OSIT ITO(Source)/Pentacene/ Al(Gate)/Pentacene/Au(Drain) under both negative drain-source voltage and gate voltage (V-G), and the influence of contact resistance on OSITs is investigated. Our simulation showed that the injection barriers, the depletion layer and the gate controlling reduce when OSIT approaches the space-charge-limited current mode by decreasing the negative V-G, which confirms our previous supposal that the contact resistance at the interfaces of Al inter-gate electrode and at the two injection electrodes reduces after keeping the device for a long-enough time. Also, our simulating equations can be applied to other organic based OSITs under positive both V-DS and V-G.
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