Effects of Cerium Oxide Doping on the Microstructure and Properties of ITO Targets and the Photoelectric Properties of the Films

Jingwei Huang,Tiechui Yuan,Fangsheng Mei,Ruidi Li
DOI: https://doi.org/10.1007/s10854-019-01923-8
IF: 6.7
2019-01-01
Applied Surface Science
Abstract:In the study, 0–2.0 wt% cerium oxides (CeO2) were employed to enhance the densification and properties of indium tin oxide (ITO) targets. The effects of CeO2 on the phase composition, microstructure, resistivity and fracture strength of ITO targets and the photoelectric properties of the films were investigated in detail. Experimental results show that the optimum doping amount of CeO2 is 0.5 wt%. The functions of CeO2 doping are: (1) Lowering the sintering temperature by nearly 60 °C, which is attributed to the inhibition of the decomposition of In2O3 and SnO2; (2) Refining the grain size and promoting the formation of In4Sn3O12 phase; (3) As the donor dopant to reduce the resistivity of ITO targets and strengthening the inter-facial bonding force so as to enhance the fracture strength of ITO targets; (4) Intensifying the disorder of film non-crystals, improving the surface morphology and enhancing the transmittance.
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