Ultrahigh Energy Density of Antiferroelectric PbZrO3‐Based Films at Low Electric Field
Dongxu Li,Xiangyu Meng,Enhao Zhou,Xiaoxiao Chen,Zhonghui Shen,Qinghu Guo,Zhonghua Yao,Minghe Cao,Jinsong Wu,Shujun Zhang,Hanxing Liu,Hua Hao
DOI: https://doi.org/10.1002/adfm.202302995
IF: 19
2023-07-03
Advanced Functional Materials
Abstract:Designed gradient‐relaxor antiferroelectric PbZrO3‐based films with hierarchical domain structure are achieved for a small amount of La/Sr doping at A‐site, accounting for the enhanced polarization switching stability and increased antiferroelectric phase stability. Those features endow A‐site doped PbZrO3 films with the greatest potential for low field/voltage energy storage applications including wearable and portable devices. Dielectric capacitors play a vital role in advanced electronics and power systems as a medium of energy storage and conversion. Achieving ultrahigh energy density at low electric field/voltage, however, remains a challenge for insulating dielectric materials. Taking advantage of the phase transition in antiferroelectric (AFE) film PbZrO3 (PZO), a small amount of isovalent (Sr2+) / aliovalent (La3+) dopants are introduced to form a hierarchical domain structure to increase the polarization and enhance the backward switching field EA simultaneously, while maintaining a stable forward switching field EF. An ultrahigh energy density of 50 J cm−3 is achieved for the nominal Pb0.925La0.05ZrO3 (PLZ5) films at low electric fields of 1 MV cm−1, exceeding the current dielectric energy storage films at similar electric field. This study opens a new avenue to enhance energy density of AFE materials at low field/voltage based on a gradient‐relaxor AFE strategy, which has significant implications for the development of new dielectric materials that can operate at low field/voltage while still delivering high energy density.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology