Abstract:In recent years, the performance research of perovskite materials is not only concentrated in the field of solar cells or optics, but the field of gas sensing has gradually entered the public view. However, the detection of nitric oxide (NO) by lead-free halide perovskites has not yet been reported. Herein, we use Cs2PtI6 to realize the first example of a halide perovskite applied to NO sensing. Due to favoring Pt–N binding, the material has some excellent properties such as a NO detection limit as low as 100 parts-per-billion (ppb), ultrahigh selectivity to NO, and can work at room temperature for more than 2 months. In situ sum frequency generation (SFG) spectra and crystal orbital Hamilton population (COHP) analysis reveal that the strong bonding interaction between Pt 5s and N 2s ensure the high adsorption energy, and Pt 5d electron back donation to N 2px, N 2pz antibonding causes the conductive change of the sensors. In addition, its flexible wearable technology shows the application potential of the device and promotes the further development of perovskite materials.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acssensors.1c01791.Comparison of performance for some recent reported metal oxide semiconductors nitric oxide sensors of different types (Table S1); EDX mapping images of a Cs2PtI6 octahedron (Figure S1); low-magnification SEM figure of the electrodes where the material is deposited on them (Figure S2); SAED pattern and thermogravimetric analysis curve of Cs2PtI6 octahedrons (Figure S3); photograph of the sensor device and the thickness of the sensor film (Figure S4); gas sensor test system (Figure S5); temporal responses with increasing NO concentrations in the range of 100 ppb–10 ppm (Figure S6); influence of different temperatures on curve recovery (Figure S7); SEM images with EDS stoichiometry and the XRD pattern of pristine Cs2PtI6 and treated NO (Figure S8); repeatability of the sensor based on Cs2PtI6 toward 500 ppb, 1 ppm, 4 ppm, and 10 ppm NO (Figure S9); effect of environmental temperature to the sensor based on Cs2PtI6 with 10 ppm NO (Figure S10); effect of different relative humidities to the sensor based on Cs2PtI6 with 1, 2, 4, and 8 ppm NO (Figure S11); effect of light intensity to the sensor based on Cs2PtI6 with 400 ppb, 600 ppb, 800 ppb, and 1 ppm NO (Figure S12); the charge distribution and the O–Pt bond length of NO adsorbed on the surface of Cs2PtI6 (Figure S13); flexibility and stability of the Cs2PtI6 sensor (Figure S14); flexibility when the wrist is naturally bent downward to different degrees (Figure S15); flexibility when the wrist is naturally bent upward with different degrees (Figure S16); and schematic illustration of the preparation of the NO sensor device (Figure S17) (PDF)This article has not yet been cited by other publications.

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