Breaking Barriers in Chalcogenide Perovskite Synthesis: A Generalized Framework for Fabrication of BaMS3 (M═Ti, Zr, Hf) Materials
Shubhanshu Agarwal,Kiruba Catherine Vincent,Jonathan W. Turnley,Daniel C. Hayes,Madeleine C. Uible,Inés Durán,Alison Sofia Mesa Canizales,Shriya Khandelwal,Isabel Panicker,Zion Andoh,Robert M. Spilker,Qiushi Ma,Libai Huang,Sooyeon Hwang,Kim Kisslinger,Simon Svatek,Elisa Antolin,Suzanne C. Bart,Rakesh Agrawal
DOI: https://doi.org/10.1002/adfm.202405416
IF: 19
2024-10-10
Advanced Functional Materials
Abstract:In this study, various solution chemistries utilizing organometallic compounds, metal–organic compounds, and metallic zirconium as precursors are employed to synthesize contiguous films of BaMS3 (M═Ti, Zr, and Hf) at temperatures below 600 °C. Additionally, structural, compositional, and photoconductivity analyses are conducted. Chalcogenide perovskites have garnered increasing attention as stable, non‐toxic alternatives to lead halide perovskites. However, their conventional synthesis at high temperatures (>1000 °C) has hindered widespread adoption. Recent studies have developed low‐to‐moderate temperature synthesis methods (<600 °C) using reactive precursors, yet a comprehensive understanding of the pivotal factors affecting reproducibility and repeatability remains elusive. This study delineates the critical factors in the low‐temperature synthesis of BaMS3 (M═Zr, Hf, Ti) compounds and presents a generalized framework. Innovative approaches are developed for synthesizing BaMS3 compounds using this framework involving organometallics for solution deposition. The molecular precursor routes, employing metal acetylacetonates to generate soluble metal–sulfur bonded complexes and metal–organic compounds to produce soluble metal‐thiolate, metal‐isothiocyanate, and metal‐trithiocarbonate species, are demonstrated to yield carbon‐free BaMS3. These methods have achieved the most contiguous films of BaZrS3 and BaHfS3 using solution deposition to date. Furthermore, a hybrid solution processing method involving stacking sputter‐deposited Zr and solution‐deposited BaS layers is employed to synthesize a contiguous, oxygen‐free BaZrS3 film. The diffuse reflectance measurements indicate a direct bandgap of ≈ 1.85 eV for the BaZrS3 films and ≈ 2.1 eV for the BaHfS3 film under investigation.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology