Abstract:Chalcogenide perovskites have emerged as a new class of optoelectronic materials, especially for photovoltaic applications, but fundamental properties and applications of chalcogenide perovskites remain limited due to the lack of high-quality thin films. We report direct epitaxial thin film growth of BaZrS3, a prototypical chalcogenide, by pulsed laser deposition. X-ray diffraction studies show that the films are strongly textured out-of-plane and have a clear in-plane epitaxial relationship with the substrate. Electron microscopy studies confirm the presence of epitaxy for the first few layers of the film at the interface, even though away from the interface, the films are polycrystalline with many extended defects, suggesting the potential for further improvement in growth. X-ray reflectivity and atomic force microscopy show smooth film surfaces and interfaces between the substrate and the film. The films show strong light absorption near the band edge and photoluminescence in the visible region, validating BaZrS3 as a suitable candidate for ultrathin front absorbers in tandem solar cells. The photodetector devices show fast and efficient photo response with the highest ON/OFF ratio reported for BaZrS3 films thus far. Our study opens up opportunities to use high quality thin films of chalcogenide perovskites to probe fundamental physical phenomena in thin films and heterostructures and also in photovoltaic and optoelectronic applications.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.chemmater.1c02202.HPT sintered BZS target for PLD, temperature dependence on texture, rocking curve, UV–visible spectroscopy, and photodetector measurements (PDF)This article has not yet been cited by other publications.

Chalcogenide Perovskites - an Emerging Class of Ionic Semiconductors

Lead-Free Perovskite Semiconductors Based on Germanium–Tin Solid Solutions: Structural and Optoelectronic Properties

Chalcogenide Perovskites: An Emerging Class of Semiconductors for Optoelectronics

A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange

Advances in Chalcogenide Perovskites: Fundamentals and Applications

Fabrication of BaZrS3 chalcogenide perovskite thin films for optoelectronics

Epitaxial Thin Films of a Chalcogenide Perovskite

Bright Luminescence of Sb Doping in All-Inorganic Zinc Halide Perovskite Variant

Optoelectronic Properties of Chalcogenide Perovskites by Many-Body Perturbation Theory

Bismuth and Antimony Based Oxyhalides and Chalcohalides as Potential Optoelectronic Materials

Band-Gap Control via Structural and Chemical Tuning of Transition Metal Perovskite Chalcogenides

Properties of the chalcogenide-based double perovskites Ba2NbBiS6 and Ba2TaSbS6 with respect to structural, electronic and optical aspects

Let's PARTY: Process Algebra With Real-time From York

An Environmentally Stable and Lead-Free Chalcogenide Perovskite

Ti-Alloying of BaZrS 3 Chalcogenide Perovskite for Photovoltaics

3D Lead‐Organoselenide‐Halide Perovskites and their Mixed‐Chalcogenide and Mixed‐Halide Alloys

Prediction and Synthesis of a Selenide Perovskite for Optoelectronics

Differing vibrational properties of halide and chalcogenide perovskite semiconductors and impact on optoelectronic performance

Emerging Chalcohalide Materials for Energy Applications

A Reliable, Colloidal Syntheses Method of the Chalcogenide Perovskite, BaZrS3, and Related ABS3 Nanomaterials (A = Sr, Ba; B = Ti, Zr, Hf): Towards Thin-Film Device Applications