Gate‐Tunable Electrical Transport in Thin 2M‐WS 2 Flakes

Xiangli Che,Yujun Deng,Yuqiang Fang,Jie Pan,Yijun Yu,Fuqiang Huang
DOI: https://doi.org/10.1002/aelm.201900462
IF: 6.2
2019-01-01
Advanced Electronic Materials
Abstract:Electrolyte gating has been employed as an effective way to modulate the electronic properties of transition metal dichalcogenides (TMDs) by carrier doping over a wide range. Here, the carrier density of a new metastable phase of TMD material 2M-WS2 is controlled by electrolyte gating to achieve reversible transitions between the superconducting state, metallic state, and insulating state. Pristine 2M-WS2 has a superconducting transition temperature (T-c) of 8.9 K with a hole-type carrier density of 9.05 x 10(21) cm(-3) at 100 K. A gate voltage (V-g) is applied between the sample and a side gate, which are both immersed in a droplet of gel-like Li-ion electrolyte (LiClO4 dissolved in polyethylene oxide matrix). When V-g = -3.5 V, the sample is in its pristine superconducting phase. With increasing V-g, the lithium ions gradually intercalate into the layered sample and tune it from a superconductor to an insulator. By precise tuning of V-g in this device, the entire phase diagram of 2M-WS2 over a large range of carrier density is obtained.
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