Soliton Mode-Locked Fiber Laser with High-Quality MBE-grown Bi2Se3 Film

Runlin Miao,Mingyu Tong,Ke Yin,Hao Ouyang,Zhenyu Wang,Xin Zheng,Xiang'ai Cheng,Tian Jiang
DOI: https://doi.org/10.3788/col201917.071403
IF: 2.56
2019-01-01
Chinese Optics Letters
Abstract:In this work, a soliton mode-locked erbium-doped fiber laser(EDFL) with a high-quality molecular beam epitaxy(MBE)-grown topological insulator(TI) Bi 2 Se 3 saturable absorber(SA) is reported. To fabricate the SA device, a 16-layer Bi 2 Se 3 film was grown successfully on a 100 μm thick SiO 2 substrate and sandwiched directly between two fiber ferrules. The TI-SA had a saturable absorption of 1.12% and a saturable influence of 160 MW/cm 2 .After inserting the TI-SA into the unidirectional ring-cavity EDFL, self-starting mode-locked soliton pulse trains were obtained at a fundamental repetition rate of 19.352 MHz. The output central wavelength, pulse energy,pulse duration, and signal to noise ratio of the radio frequency spectrum were 1530 nm,18.5 p J, 1.08 ps, and 60d Bm, respectively. These results demonstrate that the MBE technique could provide a controllable and repeatable method for the fabrication of identical high-quality TI-SAs, which is critically important for ultra-fast pulse generation.
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