Abstract:The microvia filling process used in the high-density interconnect printed circuit board manufacturing industry was investigated by multi-physical coupling technology. To achieve a perfect filling, SPS (bis-(sodium-sulphopropyl)-disulphide), EO/PO (ethylene oxide and propylene oxide block co-polymers) and PEOPI (polyethylene oxide-polyimide) were used. Furthermore, electrochemical behaviours of electrodeposition were investigated by cyclic voltammetry, galvanostatic potential transient measurement and dynamic potential polarisation technology. Through numerical simulation, the relationship between coverage of additive, concentration of additive, rotating speed of rotating disc electrode, exchange current density and curve slope was fitted. Based on multi-physical coupling to copper electrodeposition, a mathematical model of microvia filling was built to simulate the filling process by a finite element method, and a systematic analysis of the whole filling process was carried out. The void-free microvia filling and filling process with different shapes were finally achieved in acid copper electroplating solutions consisting of 0.3 M CuSO4·5H2O, 0.2 M H2SO4 and 80 mg L−1 Cl− (virgin make-up solution) plus additives SPS, EO/PO and PEOPI. Subsequently, from images of the microvia filling experiment at different times, shape evolution of the microvia filling and variation of electrodeposition rate at the bottom of the microvia and surface were analysed. The modelling result was compared with the measured data and showed good agreement with the experiment. The results showed that a process model was an excellent tool for quickly and cheaply studying the process behaviour greatly reduced need to execute time-consuming and costly experiments.

Communication—Localized Accelerator Pre-Adsorption to Speed Up Copper Electroplating Microvia Filling

Influence of Electroplating Current Density on Through Silicon Via Filling

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Potential-Dependence Of Additives Distribution In Copper Electrodeposition Via Filling

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Wetting Process of Copper Filling in Through Silicon Vias

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Electrochemical and analytical study of electroplating additive in copper plating solution for microvia filling

Microvia Filling by Cu Electroplating Over a Au Seed Layer Modified by a Disulfide

Copper Fill of Microvia Using a Thiol-Modified Cu Seed Layer and Various Levelers

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Bis-(3-sulfopropyl) Disulfide Acceleration of Copper Electrodeposition via Molecular Dynamics and Quantum Chemical Calculations

Fast Filling of Microvia by Pre-Settling Particles and Following Cu Electroplating

Influence of Convection-Dependent Adsorption of Additives on Microvia Filling by Copper Electroplating

Copper electroplating technology for microvia filling

Study of microvia filling process based on multi-physical coupling

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

Trace Bis-(3-sulfopropyl)-disulfide Enhanced Electrodeposited Copper Foils

Studies of polixetonium chloride as a novel, hypotoxic and single additive of copper electronic plating for microvia void-free filling in printed circuit board application

Investigations of the electrochemical performance and filling effects of additives on electroplating process of TSV