Abstract:Chemical mechanical polishing (CMP) is a widely utilized technique for achieving ultra-smooth surfaces, yet a comprehensive understanding of the surface microtopography evolution remains elusive due to the intricate chemical and mechanical interactions inherent in chemical mechanical polishing. Accordingly, this study explores the evolution law of different spatial frequency features of surface microtopography of monocrystalline silicon by analyzing the changes in the power spectral density (PSD) curve. More importantly, the evolution mechanism of the chemical mechanical polishing surface micromorphology is revealed through the analysis of the power spectral density under different mechanical and chemical conditions. The results emphasize the noticeable impact of both mechanical and chemical actions on the evolution of different spatial frequency features in surface microtopography. The mechanical action of a large particle, less likely to contact the valley region with a small curvature radius, enhances the smoothing speed of high-spatial frequency roughness. Moreover, the mechanical action of polishing pad demonstrates a greater efficiency in smoothing mid-spatial frequency roughness when utilizing a hard pad. This is attributed to the limited impact of pad hardness on the removal depth of single particles within the reaction layer, rendering it less significant for high-spatial frequency roughness. Upon elevating the chemical reaction rate, a notable acceleration in the reduction of roughness in both mid- and high-spatial frequency regions is observed. Furthermore, insights derived from molecular dynamics (MD) simulations of monocrystalline silicon and quartz glass show that the manner of surface atom removal, whether through single atom removal or cluster removal, exerts a significant effect on the final high-spatial frequency components of the power spectral density. This study contributes valuable insights into the intricate formation mechanism of a smooth surface in chemical mechanical polishing.

CHEMICAL MECHANICAL MATERIAL REMOVAL OF SILICON DIOXIDE BY A SINGLE PAD ASPERITY

Chemical–mechanical Wear of Monocrystalline Silicon by a Single Pad Asperity

Investigation on Nanoscale Material Removal Process of BK7 and Fused Silica Glass During Chemical‐mechanical Polishing

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Chemical mechanical polishing: Theory and experiment

Physically-based modeling of pad-asperity scale chemical-mechanical synergy in chemical mechanical polishing

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Chemical Mechanical Polishing (CMP) of SiC Wafer Using Photo-Catalyst Incorporated Pad

Mechanical removal of SiC by multi-abrasive particles in fixed abrasive polishing using molecular dynamics simulation

Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing

The Deterioration Characteristics and Mechanism of Polishing Pads in Chemical Mechanical Polishing of Fused Silica

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Investigation of the chemical action mechanism based on reactive force field in SiC chemical–mechanical polishing process

An Analyzing on Material Removal Mechanism in Chemical Mechanical Polishing of Cu

Modeling the microscale contact status in chemical mechanical polishing process

Mechanism and Applications of Chemical and Mechanical Polishing

Mechanical Model of Nanoparticles for Material Removal in Chemical Mechanical Polishing Process

Wear phenomena in chemical mechanical polishing

Surface Microtopography Evolution of Monocrystalline Silicon in Chemical Mechanical Polishing