Abstract:Many industrial and scientific applications, ranging from 3D imaging (such as LIDAR, surveillance, object tracking) to Time Correlated Single Photon Counting (TCSPC), require the ability to perform time-resolved detection of weak light signals, down to single-photon level. Single-Photon Avalanche Diodes are solid-state detectors capable of single-photon sensitivity in the visible and near-infrared wavelength regions and compatible with standard silicon processes. This demand driven the development of low cost, large size CMOS SPAD imagers. In this work we present the design and characterization of a time-gated 32x32 SPAD image sensor fabricated in a 0.16 μm BCD (Bipolar-CMOS-DMOS) technology. The sensor is based on an innovative 16x16 macropixel structure, each composed by four SPADs with independent sensing front-end and event counters, plus a shared Timeto- Digital Converter (TDC). This approach enables higher fill-factor (9.6% with a pixel pitch of 100 μm) by sharing the costly (in terms of area) TDC resource, as well as reduced power dissipation. The imager provides simultaneous photon-timing and photon-counting data and features a 12 bit, 75 ps bin width TDC, which can perform one conversion per each gate window, with up to 62 windows per data readout frame. Two main operation modes are available: a single-photon mode, where an arbitration circuit within the macropixel is used to share the TDC among the 4 SPADs, but with no loss of X-Y resolution (i.e. keeping information about the triggered SPAD); and a two-photon-coincidence mode, where the TDC performs a conversion only if two SPADs of the macropixel are triggered within a preset coincidence window. Lastly, the sensor features multiple readout modes, with varying amount of output data, in order to fit different end-user applications. The imager is capable of 100 kfps (frames per second) in full readout mode, and up to 400 kfps in a reduced data set mode.

A Compact SPAD Pixel with Active Quenching and Recharging

A SPAD-Based QVGA Image Sensor for Single-Photon Counting and Quanta Imaging

Junction-Optimized SPAD With 50.6% Peak PDP and 0.64 cps/μm2 DCR at 2 V Excess Bias Voltage in 130 nm CMOS

An Indirect Time-of-Flight SPAD Pixel With Dynamic Comparator Reuse for a Single-Slope ADC

A 32 × 32 Avalanche Photodiode Array Read-out Circuit with Rapid Active-Quenching and High-Voltage Protection

An 8×1k SPAD detector with TDI in 0.13μm CMOS technology

A $128\times 1$ Pixels, High Dynamic Range SPAD Imager in $0.18\ \mu\text{m}$ CMOS Technology.

A new single-photon avalanche diode in 90nm standard CMOS technology

A <tex>$128\times 1$</tex> Pixels, High Dynamic Range SPAD Imager in <tex>$0.18\ \mu\text{m}$</tex> CMOS Technology

An 8&#x00d7;1k SPAD Detector with TDI in 0.13&#x03bc;m CMOS Technology

Time-gated SPAD camera with reconfigurable macropixels for LIDAR applications

A 128x1 Pixels, High Dynamic Range Spad Imager In 0.18 Mu M Cmos Technology

A Compact Low-Noise Digital Pixel with 15-bit Two-Step PFM-based ADC for IRFPAs

Enhanced Silicon Single-Photon Avalanche Diode Based on Light Trapping

Characterization of small single photon avalanche diode fabricated using standard 180 nm CMOS process for digital SiPM

An Ultraviolet Photon Counting Imaging System Based on a SiC SPAD Array

A 512 × 512 SPAD Image Sensor With Integrated Gating for Widefield FLIM

On-Chip Compressive Sensing with a Single-Photon Avalanche Diode Array

A High Dynamic Range Pixel Circuit with High-voltage Protection for 128×128 Linear-mode APD Array

Ultra-Low Dark Count Rate SPAD Fully Integrated in a 180 nm High-Voltage CMOS Process

3.2 Megapixel 3D-Stacked Charge Focusing SPAD for Low-Light Imaging and Depth Sensing