Abstract:HgCdTe has been shown to be the first semiconductor exhibiting single-carrier multiplication in short-wavelength, medium-wavelength, long-wavelength avalanche photodiodes detectors for cut-off wavelengths from 1.3 mu m to 11 mu m corresponding to compositions x(cd) from 0.7 to 0.2, which has the remarkable characteristics of high gain, high bandwidth and almost no excess noise. These results have opened a new horizon in photon starved and high speed applications, such as active imaging and free space optical communications. In this paper, we report the latest results at SITP of HgCdTe e-APDs using LPE-grown absorption layers in the SW and MW wavelength bands. The gain of single element short-wavelength HgCdTe APD for 2.57 mu m cut-off wavelength is about 100 at 25V reverse bias, and GNDCD is about 1.47x10(-7)A/cm(2) at gain of 100 at 130K. For MW HgCdTe APDs, increase the P region doping concentration will reduce the overall dark current density and eliminate sudden rise of dark current at large bias and high temperature, and lower Cd composition could be a trade-off way for GNDCD suppression. 50 mu m pitch 128x128 array HgCdTe APDs for cut-off wavelengths 4.88 mu m corresponding to compositions x(cd) 0.307 were fabricated, whose GNDCD is less than 1x10(-7)A/cm(2) at 8V reverse bias, gain is over 1000 at 11V reverse bias. A 50 mu m pitch 128x128 array HgCdTe APDs with x(cd)=0.29 was manufactured, whose gain reaches 1570 at 9.8V reverse bias, the average excess noise factor is 1.25 at average gain of 133, noise equivalent photon is about 12 at average gain of 113. By thinning the absorption region thickness, the response bandwidth of Hg0.79Cd0.31Te APD reaches 635MHz under 1V reverse bias. Moreover, the medium-wavelength focal plane of 320x256 array are demonstrated the imaging, and the low noise, high sensitivity and fast imaging characteristics of HgCdTe APDs under linear avalanche gain are verified.

Improved Local Field Model for HgCdTe Electron Avalanche Photodiode

Device design of planner PIN HgCdTe avalanche photodiode

Dark Current and Noise Analysis for Long-wavelength Infrared HgCdTe Avalanche Photodiodes

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

Avalanche Gain Modeling Revisited in HgCdTe APDs

Modeling and Characteristics of MWIR HgCdTe APD at Different Post-Annealing Processes

High-performance HgCdTe avalanche photodetector enabled with suppression of band-to-band tunneling effect in mid-wavelength infrared

Study on dark current suppression of HgCdTe avalanche photodiodes for low flux photon detection

The Performance of Mid-Wave Infrared HgCdTe E-Avalanche Photodiodes at SITP

Design and Fabrication of HgCdTe Linear Avalanche Devices with Low Gain Normalized Dark Current Density

Modeling on Current-Voltage Characteristics of HgCdTe Photodiodes in Forward Bias Region

Enhanced Performance of HgCdTe Midwavelength Infrared Electron Avalanche Photodetectors with Guard Ring Designs

A Modified Equivalent Circuit Model for High-Speed InGaAs/InAlAs Avalanche Photodiodes

Gain and Excess Noise in HgCdTe e-Avalanche Photodiodes at Various Temperatures and Wavelengths

Study on High Gain-Bandwidth Product HgCdTe MWIR Electron Avalanche Photodiodes

Developments and Characterization of HgCdTe E-Apds at SITP

Research on High Gain-Bandwidth Product Mid-Wavelength Infrared HgCdTe Avalanche Photodiodes

Bandwidth Characteristics of Mid-Wavelength Infrared PIN HgCdTe Avalanche Photodiodes

Mechanism of dark current dependence on reverse voltage in mid-wavelength infrared HgCdTe mesa PIN avalanche diode

Characterization of gain and excess noise for mid-wavelength infrared HgCdTe electron avalanche photodiodes

Temperature-Dependent Characteristics of HgCdTe Mid-Wave Infrared E-Avalanche Photodiode