Abstract:The high-quality growth of midwave infrared light emitters on silicon substrates will advance their incorporation into photonic integrated circuits, and also introduce manufacturing advantages over conventional devices grown on lattice-matched GaSb. Here we report interband cascade light emitting devices (ICLEDs) grown on 4 degree offcut silicon with 12% lattice mismatch. Four wafers produced functioning devices, with variations from wafer to wafer but uniform performance of devices from a given wafer. The full width at half maxima for the (004) GaSb rocking curves were as narrow as ∼ 163 arc seconds, and the root mean square surface roughness as small as 3.2 nm. Devices from the four wafers, as well as from a control structure grown to the same design on GaSb, were mounted epitaxial-side-up (epi-up). While core heating severely limited continuous wave (cw) emission from the control devices at relatively modest currents, efficient heat dissipation via the substrate allowed output from the devices on silicon to increase up to much higher currents. Although the devices on silicon had higher leakage currents, probably occurring primarily at dislocations resulting from the lattice-mismatched growth, accounting for differences in architecture the efficiency at high cw current was approximately 75% of that of our previous best-performing standard epi-down ICLEDs grown on GaSb. At 100 mA injection current, 200-µm-diameter mesas produced 184 µW of cw output power when operated at T = 25 °C, and 140 µW at 85°C. Epi-up mid-IR light emitters grown on silicon will be far simpler to process and much less expensive to manufacture than conventional devices grown on GaSb and mounted epi-down.

InAs/GaSb Superlattice Interband Cascade Light Emitting Diodes with High Output Power and High Wall-Plug Efficiency

Mid-infrared interband cascade light-emitting diodes with InAs/GaAsSb superlattices on InAs substrates

Mid-infrared interband cascade light emitting devices grown on off-axis silicon substrates

Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

High-Efficiency, Microscale Gan Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Cascaded InGaSb quantum dot mid-infrared LEDs

High-output power GaN-LED based on surface plasmon enhancement

InAs/GaAs quantum-dot superluminescent diodes monolithically grown on a Ge substrate.

High Operation Temperature Mid-Wavelength Interband Cascade Infrared Photodetectors Grown On Inas Substrate

Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy

High power GaSb-based superluminescent diode with cascade cavity suppression waveguide geometry and ultra-low antireflection coating

Optimized GaAs∕AlGaAs Light-Emitting Diodes and High Efficiency Wafer-Fused Optical Up-Conversion Devices

Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer

Nonpolar M-Plane Thin Film Gan and Ingan/Gan Light-Emitting Diodes on Lialo2(100) Substrates

High Power Compact Quantum Cascade Superluminescent Emitters with High Temperature Stability and Optical Beam Quality

Molecular Beam Epitaxy Growth Of High Quality Inas/Gasb Type-Ii Superlattices For Long Wavelength Infrared Detection

Interfacial Characteristics and Optical Properties of InAs/InAsSb Type II Superlattices for the Mid‐Infrared Operation

Schematic of InAs/GaSb superlattice VLWIR photodide with PIN structure and the current responsivity spectrum of the SL photodiode. Interface optimization and fabrication of InAs/GaSb type II superlattice for very long wavelength infrared photodetectors

Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study

Fabrication and Characteristics of InAs/GaSb Type-II Superlattice Infrared Detector Pixel Mesas

395 Nm GaN-based Near-Ultraviolet Light-Emitting Diodes on Si Substrates with a High Wall-Plug Efficiency of 520%@350 Ma