Abstract:A facile plasma treatment method is applied to improve the efficiency of CuIn(S,Se)2 solar cells. The plasma treatment oxides surface Mo to high oxidation states, which not only hinders the diffusion of selenium but significantly improves the wettability of the precursor solution to the substrate, resulting in void‐free large grain absorber film with thinner MoSe2 layer. A champion device with a high efficiency of 14.5% is achieved. Solution‐processed chalcopyrite thin film solar cells have made great progress but still lag behind the vacuum‐based ones due to inferior absorber quality and non‐ideal interfaces. Here, plasma treatment of the molybdenum (Mo) substrate is reported to modify the back interface and improve the efficiency of solution‐processed copper indium sulfoselenide (CuIn(S,Se)2, CISSe) solar cells. The results show plasma treatment oxides the surface Mo/MoO2 to high oxidation oxides MoO3‐x (0 ≤ x < 1). The higher surface polarity greatly improves the wettability of the substrate to the precursor solution and results in formation of more compact and uniform precursor film, which grows to void‐free larger grains absorber film with better adhesion to the substrate. In addition, the much higher chemical stability of MoO3‐x than Mo significantly reduces the thickness of high resistive MoSe2 layer. The improved absorber quality and back interface property decreases charge carrier recombination in the absorber and back contact interface, resulting in 14.53% efficiency solution‐processed CISSe solar cell, which is improved by 13% compared to device without plasma treatment.

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Preparation of Wide Bandgap CuGaSe2 Absorbers and Solar Cells by Sputtering a Selenium-Rich Ceramic Target and Annealing in a Selenium-Free Atmosphere

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Electronic structure, defect properties, and optimization of band gap of the earth-abundant and low-toxicity photovoltaic absorber Cu3SbS4

Back Contact Plasma Treatment Enables 14.5% Efficient Solution‐Processed CuIn(S,Se)2 Solar Cells

Improvement of grain growth and composition distribution of Cu2ZnSn(S,Se)4 by using chloride-based precursor solution