Ultralow Lattice Thermal Conductivity in SnTe by Manipulating the Electron–Phonon Coupling

Shi-Xin Lin,Xiaojian Tan,Hezhu Shao,Jingtao Xu,Qingsong Wu,Guo-Qiang Liu,Wen-Hua Zhang,Jun Jiang
DOI: https://doi.org/10.1021/acs.jpcc.9b03329
2019-01-01
Abstract:SnTe has been regarded as an environment-friendly alternative of PbTe thermoelectrics, although its performance is limited by its high thermal conductivity, partly owing to its high carrier concentration. In SnTe + xAgSbSe(2), we observe a significant decrease of the total thermal conductivity from 3.37 to 1.27 W m(-1) K-1 at 850 K, even though the hole concentration is at a high level of 10(21) cm(-3). With the increase of the AgSbSe2 fraction, both the electrical and thermal conductivities decrease to their minima at x = 20%, and then they start to increase simultaneously, indicating strong electron-phonon coupling. By applying the first-principles calculations, it is unraveled that the minimum of thermal conductivity is due to the nonmonotonic dependence of electron-phonon coupling on the lattice constant. At x = 20%, a ZT value of 0.95 at 850 K is achieved, accompanied by an ultralow lattice thermal conductivity. This study reveals that tuning the electron-phonon coupling could be an efficient way to improve the thermoelectric performance, if it is constrained within the process of intravalley scattering.
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